Electrical properties modulation of thin film solar cell using gold nanostructures at textured FTO/p–i–n interface

2015 ◽  
Vol 08 (02) ◽  
pp. 1550017 ◽  
Author(s):  
A. Gentile ◽  
G. Cacciato ◽  
F. Ruffino ◽  
R. Reitano ◽  
G. Scapellato ◽  
...  

We report about the modulation of the electrical properties of thin film solar cells due to the incorporation of size-selected Au nanostructures (NSs) at a textured FTO/p–i–n interface. By increasing the Au NSs size, the analyses of current-voltage characteristics show lower Schottky barrier heights and the gradual reduction of the open-circuit voltages (V OC ). The optical measurements show higher parasitic absorption by larger Au NSs that reduces the amount of radiation transmitted by the transparent to absorber layer. This process decreases the number of photo-generated carriers and may explain the V OC reduction related to the devices with larger Au NSs at the interface. So, the correlation between materials properties and device performances was established.

Open Physics ◽  
2006 ◽  
Vol 4 (1) ◽  
pp. 20-29 ◽  
Author(s):  
Abraham Varghese ◽  
C. Menon

AbstractThe influence of iodine on the electrical properties of sandwich structures of magnesium phthalocyanine (Mg Pc) thin films with gold and aluminium electrodes has been investigated. The various electrical properties and different electrical parameters of the iodine-doped Mg Pc thin film devices have been estimated and compared with the values of normal Mg Pc devices from the analysis of the current-voltage characteristics. Generally samples showed an asymmetric conductivity both under forward and reverse bias. From our study we found that iodine doped Mg Pc films showed an enhanced electrical conductivity of nearly ten times that of typical Mg Pc. At low voltages the films showed an ohmic conduction with a hole concentration of P0 = 6.34 × 1018 m−3 and hole mobility μ = 9.16 × 10−5 m 2 V−1 s−1, whereas at higher voltage levels the conduction is dominated by space charged limited conduction (SCLC) with a discrete trapping level of 1.33 × 1022 m−3 at 0.63 eV above the valance band edge. The ratio of the free charges to trapped charges (trapping factor) for the doped samples was found to be 1.07 × 10−7. Furthermore the reverse conduction mechanisms have also been investigated. From the current limitations in the reverse condition a strong rectifying behaviour was evident which was attributed to Poole-Frankel emission with a field-lowering coefficient of value 2.24 × 10−5 eV m1/2 V−1/2.


Author(s):  
А.Н. Гусев ◽  
А.С. Мазинов ◽  
В.С. Гурченко ◽  
А.С. Тютюник ◽  
Е.В. Брага

The current-voltage characteristics of hybrid organic materials C48H42N6O2Zn and C54H54N6O2Zn are researched. The method of obtaining, microscopy, as well as the results of infrared spectroscopy and studies of the electrical properties of the obtained thin films of these organic materials based on zinc complexes. The results of calculating the optical band gap are presented. It was found that the resulting thin-film structures have N-shaped current-voltage characteristics.


2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.


2012 ◽  
Vol 152 (1) ◽  
pp. 34-37 ◽  
Author(s):  
Uma Khachar ◽  
P.S. Solanki ◽  
R.J. Choudhary ◽  
D.M. Phase ◽  
V. Ganesan ◽  
...  

2006 ◽  
Vol 32 (1) ◽  
pp. 48-50 ◽  
Author(s):  
V. V. Simakov ◽  
O. V. Yakusheva ◽  
A. I. Grebennikov ◽  
V. V. Kisin

2019 ◽  
Vol 43 (41) ◽  
pp. 16255-16263
Author(s):  
Mrinmoy Ghosh ◽  
Sandip Saha ◽  
Abhijit Banerjee ◽  
Dieter Schollmeyer ◽  
Ananda Sarkar ◽  
...  

The structure, FESEM, Al/complex/ITO microstructure and the current–voltage characteristics of the copper(ii) azido bridged dimer.


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