Large Area Printing of Organic Transistors via a High Throughput Dry Process

2002 ◽  
Vol 736 ◽  
Author(s):  
Graciela B. Blanchet ◽  
Yueh-Lin Loo ◽  
J. A. Rogers ◽  
F. Gao ◽  
C. R. Fincher

Organic electronic systems offer the advantage of low weight and flexibility at potentially lower cost. Although the fabrication of functioning plastic transistors using approaches such as ink jet, lithography and stamping has been described i1–3, chemically compatible materials that allow for the sequential application of liquid layers is a technical barrier. Material issues maybe the Achilles heel of ultimately printing organic electronic devices as newspapers today, at high speeds and in a reel to reel process. We introduce a novel process–thermal transfer–a non-lithographic technique that enables printing multiple, successive layers via a dry additive process. This method is capable of patterning a range of organic materials at high speed over large areas with micron size resolution and excellent electrical performance. Such a dry, potentially reel-to-reel printing method may provide a practical route to realizing the expected benefits of plastics for electronics. We illustrate the viability of thermal transfer and the ability to develop suitable printable organics conductors by fabricating a functioning 4000 cm2 transistor array.

2019 ◽  
Vol 92 (4) ◽  
pp. 121-134
Author(s):  
James Sturm ◽  
Yoni Mehlman ◽  
Levent E. Aygun ◽  
Can Wu ◽  
Z Zheng ◽  
...  

2007 ◽  
Author(s):  
R. E. Crosbie ◽  
J. J. Zenor ◽  
R. Bednar ◽  
D. Word ◽  
N. G. Hingorani

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.


2001 ◽  
Vol 13 (12) ◽  
pp. 1349-1351 ◽  
Author(s):  
M. Gokkavas ◽  
O. Dosunmu ◽  
M.S. Unlu ◽  
G. Ulu ◽  
R.P. Mirin ◽  
...  

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 471-475 ◽  
Author(s):  
Marc Chason ◽  
Daniel R. Gamota ◽  
Paul W. Brazis ◽  
Krishna Kalyanasundaram ◽  
Jie Zhang ◽  
...  

AbstractDevelopments originally targeted toward economical manufacturing of telecommunications products have planted the seeds for new opportunities such as low-cost, large-area electronics based on printing technologies. Organic-based materials systems for printed wiring board (PWB) construction have opened up unique opportunities for materials research in the fabrication of modular electronic systems.The realization of successful consumer products has been driven by materials developments that expand PWB functionality through embedded passive components, novel MEMS structures (e.g., meso-MEMS, in which the PWB-based structures are at the milliscale instead of the microscale), and microfluidics within the PWB. Furthermore, materials research is opening up a new world of printed electronics technology, where active devices are being realized through the convergence of printing technologies and microelectronics.


2009 ◽  
Vol 95 (23) ◽  
pp. 233305 ◽  
Author(s):  
Richard R. Lunt ◽  
Brian E. Lassiter ◽  
Jay B. Benziger ◽  
Stephen R. Forrest

2013 ◽  
Vol 844 ◽  
pp. 158-161 ◽  
Author(s):  
M.I. Maksud ◽  
Mohd Sallehuddin Yusof ◽  
M. Mahadi Abdul Jamil

Recently low cost production is vital to produce printed electronics by roll to roll manufacturing printing process like a flexographic. Flexographic has a high speed technique which commonly used for printing onto large area flexible substrates. However, the minimum feature sizes achieved with roll to roll printing processes, such as flexographic is in the range of fifty microns. The main contribution of this limitation is photopolymer flexographic plate unable to be produced finer micron range due to film that made by Laser Ablation Mask (LAMs) technology not sufficiently robust and consequently at micron ranges line will not be formed on the printing plate. Hence, polydimethylsiloxane (PDMS) is used instead of photopolymer. Printing trial had been conducted and multiple solid lines successfully printed for below fifty microns line width with no interference between two adjacent lines of the printed images.


2014 ◽  
Vol 13 (1) ◽  
Author(s):  
Jan Čech ◽  
Jana Hanusová ◽  
Pavel Sťahel ◽  
Mirko Černák

AbstractDiffuse Coplanar Surface Barrier Discharge (DCSBD) is a novel type of atmospheric-pressure plasma source developed for high-speed large-area surface plasma treatments. The statistical behavior of microdischarges of DCSBD generated in artificial air atmosphere was studied using time-correlated optical and electrical measurements. Changes in behavior of microdischarges are shown for various electrode gap widths and input voltage amplitudes. They are discussed in the light of correlation of the number of microdischarges and the number of unique microdischarges’ paths per discharge event.The ‘memory effect’ was observed in the behavior of microdischarges and it manifests itself in a significant number of microdischarges reusing the path of microdischarges from previous half-period. Surprisingly this phenomenon was observed even for microdischarges of the same half-period of the discharge, where mechanisms other than charge deposition have to be involved. The phenomenon of discharge paths reuse is most pronounced for wide electrode


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