Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
2013 ◽
Vol 740-742
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pp. 23-26
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Keyword(s):
We have investigated growth rate and surface morphology of 4H-SiC single crystal grown from Si-C solution with various supersaturation levels at growth temperature in the range from 1840 to 2140 °C. The growth rate depends linearly on the amount of supersaturated carbon, irrespective of the growth temperature. This indicates that the growth is limited by the transfer of solute element onto the crystallization front. The adequate condition for stable solution growth are discussed with respect to high growth rate and surface morphology.
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2013 ◽
Vol 740-742
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pp. 65-68
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2010 ◽
Vol 645-648
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pp. 63-66
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Keyword(s):
2016 ◽
Vol 858
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pp. 1210-1213
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Keyword(s):
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1976 ◽
Vol 15
(2)
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pp. 243-247
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2009 ◽
Vol 18
(10)
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pp. 1332
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Keyword(s):
2002 ◽
Vol 99
(20)
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pp. 12523-12525
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