Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

2002 ◽  
Vol 91 (5) ◽  
pp. 3236-3242 ◽  
Author(s):  
T. G. Kim ◽  
C. N. Whang ◽  
Yohan Sun ◽  
Se-Young Seo ◽  
Jung H. Shin ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Si Nanocrystals ◽  
Chemical Vapor Deposited

Microbridge Nanoindentation Testing of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films

2004 ◽  
Vol 841 ◽  
Author(s):  
Zhiqiang Cao ◽  
Tong-Yi Zhang ◽  
Xin Zhang
Keyword(s):  
Residual Stresses ◽  
Thermal Annealing ◽  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Residual Deflection ◽  
Compressive Stresses ◽  
Stress Changes ◽  
Chemical Vapor Deposited

ABSTRACTPlasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young's modulus of PECVD SiOx films. Our theoretical model employed a closed formula of deflection vs. load, considering both substrate deformation and the residual stresses in the thin films. In particular, the non-negligible residual deflection caused by excessive compressive stresses was taken into account. Freestanding microbridges made of PECVD SiOx films were fabricated using bulk micromachining techniques. To simulate the thermal processing in device fabrication, these microbridges were subjected to rapid thermal annealing (RTA) up to 800°C. A microstructure-based mechanism was applied to explain the experimental results of the residual stress changes in PECVD SiOx films after thermal annealing.

Effects of N2O Fluence on the PECVD-grown Si-rich SiOx with Buried Si Nanocrystals

2005 ◽  
Vol 862 ◽  
Author(s):  
Chun-Jung Lin ◽  
Hao-Chung Kuo ◽  
Chia-Yang Chen ◽  
Yu-Lun Chueh ◽  
Li-Jen Chou ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Annealing Process ◽  
Room Temperature Photoluminescence ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
20 Nm ◽  
Oxidation Effect

AbstractThe optimized N2O fluence is demonstrated for plasma enhanced chemical vapor deposition (PECVD) of Si-rich substoichiometric silicon oxide (SiOx) films with buried Si nanocrystals. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx films grown by PECVD under a constant SiH4 fluence of 20 sccm with an N2O fluence varying from 105 sccm to 130 sccm. A 22-nm-redshift in the central PL wavelength has been detected after annealing from 15 min to 180 min. The maximum PL irradiance is observed from the SiOx film grown at the optimal N2O fluence of 120 sccm after annealing for 30 minutes. Larger N2O fluence or longer annealing time leads to a PL band that is blue-shifted by 65 nm and 20 nm, respectively. Such a blue shift is attributed to shrinkage in the size of the Si nanocrystals with the participation of oxygen atoms from N2O incorporated within the SiOx matrix. The (220)-oriented Si nanocrystals exhibit radii ranging from 4.4 nm to 5.0 nm as determined by transmission electron microscopy (TEM). The luminescent lifetime lengthens to 52 μs as the nc-Si size increase to > 4 nm. Optimal annealing times for SiOx films prepared at different N2O fluences are also reported. A longer annealing process results in a stronger oxidation effect in SiOx films prepared at higher N2O fluences, yielding a lower PL irradiance at shorter wavelengths. In contrast, larger Si nanocrystals can be precipitated when the N2O fluence becomes lower; however, such a SiOx film usually exhibits weaker PL at longer wavelength due to a lower nc-Si density. These results indicate that a N2O/SiH4 fluence ratio of 6:1 is the optimized PECVD growth condition for the Si-rich SiO2 wherein dense Si nanocrystals are obtained after annealing.

Pentacene Thin Film Transistors and Circuits: Influence of Processing and Device Design

2002 ◽  
Vol 725 ◽  
Author(s):  
D. Knipp ◽  
R. A. Street ◽  
B. Krusor ◽  
J. HO
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Self Assembled Monolayers ◽  
Flexible Substrates ◽  
Thermal Oxide ◽  
Chemical Vapor Deposited ◽  
Structural And Electronic Properties ◽  
Assembled Monolayers

AbstractThe influence of different dielectrics on the structural and electronic properties of pentacene films and TFTs is discussed. The pentacene films were thermally evaporated on inorganic dielectrics compatible with flexible substrates. A strong correlation between morphology and structural properties of the pentacene films and the mobility of the TFTs was observed for all the dielectrics studied. In the case of plasma enhanced chemical vapor deposited (PECVD) silicon nitride and silicon oxide dielectrics the growth of pentacene is mainly determined by the roughness of the dielectric. The roughness inhibits the ordering of pentacene molecules on the surface. However, by optimizing the fabrication process of the dielectrics, we have achieved similar pentacene mobilities on PECVD dielectrics and thermal oxide (0.4 cm2/Vs), without employing self-assembled monolayers like octadecyltrichlorosilane (OTS). An OTS treatment of oxide based dielectrics leads to an increase of the mobility by a factor of 2-3 up to >1cm2/Vs for thermal oxide. Pentacene films on inorganic dielectrics exhibit mobilities from of 0.2-1.2 cm2/Vs and high on/off ratios between 107 and 108.

Tailored Deposition by LPCVD of Non-stoichiometric Si Oxides and their Application in the Formation of Si Nanocrystals Embedded in SiO2 by Thermal Annealing

2007 ◽  
Vol 989 ◽  
Author(s):  
Bruno Morana ◽  
Juan Carlos G. de Sande ◽  
Andrés Rodríguez ◽  
Jesús Sangrador ◽  
Tomás Rodríguez ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Design Experiment ◽  
Si Nanocrystals ◽  
Pressure Chemical ◽  
Face Centered ◽  
Central Composite

AbstractSilicon oxide films with excess of Si were deposited by Low Pressure Chemical Vapor Deposition. The growth rate of the films and the excess of silicon in them have been modeled using a Face-centered Central Composite Design experiment. Samples annealed at 1100°C show luminescence (665 nm) at 80K and at room temperature associated to Si nanocrystals.

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