Bulk Growth of Single-Crystal Cubic Silicon Carbide by Vacuum Sublimation Method

1993 ◽  
Vol 32 (Part 2, No. 5A) ◽  
pp. L645-L647 ◽  
Author(s):  
Katsuki Furukawa ◽  
Yoshimitsu Tajima ◽  
Hajime Saito ◽  
Yoshihisa Fujii ◽  
Akira Suzuki ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Vacuum Sublimation ◽  
Bulk Growth ◽  
Sublimation Method ◽  
Cubic Silicon Carbide

Growth of Beta Silicon Carbide Film on Si by Hot-Filament CVD

1994 ◽  
Vol 339 ◽  
Author(s):  
Zhang Rong ◽  
Shi Hongtao ◽  
Yu Shidong ◽  
Zheng Youdou ◽  
He Yuliang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Chemical Vapor ◽  
Wide Band ◽  
Structure Study ◽  
Wafer Surface ◽  
Silicon Carbide Film ◽  
Scattering Spectrum ◽  
Hot Filament ◽  
Cubic Silicon Carbide

ABSTRACTIn this paper, we will report fabrication and structure study of single crystal β-SiC film on Si substrate by hot-filament chemical vapor deposition (HFC VD). The reaction sources are hydrogen-diluted methane(CH4) and Silane(SiH4). The wafer surface temperature is about 650°C. The typical growth rate is 200nm/h. Raman scattering spectrum shows a peak centering at 960cm-1 with a full width at half magnitude (FWHM) of 75cm-1. At room temperature, the photoluminescence spectrum gives a wide band at 580nm (2.2eV) with a FWHM of 55nm. Fourier transmission infrared (FT-IR) spectrum exhibits an absorption peak at 12.6 μm XRD and XPS analysis indicate that the epilayer is a stoichiometrical single crystal cubic silicon carbide film.

Epitaxial growth of cubic silicon carbide on silicon by sublimation method

2003 ◽  
Vol 23 (1-2) ◽  
pp. 39-42 ◽  
Author(s):  
Xianfeng Feng ◽  
Zhiming Chen ◽  
Jianping Ma ◽  
Xiang Zan ◽  
Hongbin Pu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Sublimation Method ◽  
Cubic Silicon Carbide

scholarly journals SiC single crystal growth by a vacuum sublimation method.

Shinku ◽  
1987 ◽  
Vol 30 (11) ◽  
pp. 886-892 ◽  
Author(s):  
Kazuyuki KOGA ◽  
Yasuhiro UEDA ◽  
Toshitake NAKATA ◽  
Takao YAMAGUCHI ◽  
Tatsuhiko NIINA
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Vacuum Sublimation ◽  
Sublimation Method

Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Rendakova ◽  
N. Kuznetsov ◽  
N. Savkina ◽  
M. Rastegaeva ◽  
A. Andreev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Small Area ◽  
Defect Density ◽  
Schottky Barriers ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Vacuum Sublimation ◽  
Sublimation Method

ABSTRACTThe characteristics of SiC high-power devices are currently limited by the small area of the devices, which is usually less than 1 sq. mm. In order to increase device area, defect density in SiC epitaxial structures must be reduced. In this paper, we describe properties of silicon carbide epitaxial layers grown on 4H-SiC wafers with reduced micropipe density. These layers were grown by the vacuum sublimation method. Large area Schottky barriers (up to 8 mm2) were fabricated on SiC epitaxial layers and characterized.

Bulk growth of single crystal silicon carbide

2006 ◽  
Vol 83 (1) ◽  
pp. 155-159 ◽  
Author(s):  
T.S. Sudarshan ◽  
S.I. Maximenko
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Bulk Growth
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