Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Rendakova ◽  
N. Kuznetsov ◽  
N. Savkina ◽  
M. Rastegaeva ◽  
A. Andreev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Small Area ◽  
Defect Density ◽  
Schottky Barriers ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Vacuum Sublimation ◽  
Sublimation Method

ABSTRACTThe characteristics of SiC high-power devices are currently limited by the small area of the devices, which is usually less than 1 sq. mm. In order to increase device area, defect density in SiC epitaxial structures must be reduced. In this paper, we describe properties of silicon carbide epitaxial layers grown on 4H-SiC wafers with reduced micropipe density. These layers were grown by the vacuum sublimation method. Large area Schottky barriers (up to 8 mm2) were fabricated on SiC epitaxial layers and characterized.

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

2008 ◽  
Vol 1069 ◽  
Author(s):  
Michael O'Loughlin ◽  
K. G. Irvine ◽  
J. J. Sumakeris ◽  
M. H. Armentrout ◽  
B. A. Hull ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Process Optimization ◽  
High Voltage ◽  
Defect Density ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Device Processing ◽  
Defect Densities ◽  
Hot Wall Epitaxy

ABSTRACTThe growth of thick silicon carbide (SiC) epitaxial layers for large-area, high-power devices is described. Horizontal hot-wall epitaxial reactors with a capacity of three, 3-inch wafers have been employed to grow over 350 epitaxial layers greater than 100 μm thick. Using this style reactor, very good doping and thickness uniformity and run-to-run reproducibility have been demonstrated. Through a combination of reactor design and process optimization we have been able to achieve the routine production of thick epitaxial layers with morphological defect densities of around 1 cm−2. The low defect density epitaxial layers in synergy with improved substrates and SiC device processing have resulted in the production of 10 A, 10 kV junction barrier Schottky (JBS) diodes with good yield (61.3%).

Silicon carbide high-power devices

1996 ◽  
Vol 43 (10) ◽  
pp. 1732-1741 ◽  
Author(s):  
C.E. Weitzel ◽  
J.W. Palmour ◽  
C.H. Carter ◽  
K. Moore ◽  
K.K. Nordquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Power Devices

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for Power Elec-tronics Technology. Review

2020 ◽  
Vol 25 (6) ◽  
pp. 483-396
Author(s):  
A.V. Afanasev ◽  
◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
S.A. Reshanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Main Method ◽  
Technological Factors ◽  
Current State ◽  
Individual Task ◽  
Technology Review

Currently, chemical gas deposition is the main method for producing high-quality and reproducible epitaxial layers for commercial silicon carbide (SiC) power devices. Based on the experience of ETU «LETI» in the synthesis of monocrystalline SiC, an analysis of the current state of silicon carbide gas phase epitaxy (CVD) technology was carried out. It has been shown that modern CVD reactors allow to implement the growth processes of SiC epitaxial structures of high quality with the following parameters: substrates diameter up to 200 mm; thicknesses of epitaxial layers from 0.1 to 250 μm; layers of n - and p -types conductivity with ranges of doping levels 10-10 cm and 10-10 cm, respectively. At the same time, setting up the technology of the reproducible high-quality growth of epitaxial layers is an individual task for a specific type of reactor. It requires a detailed consideration of the technological factors presented in this paper, which at the end determine the achievable parameters of SiC-epitaxial products

Multi-nozzle array spray cooling for large area high power devices in a closed loop system

2014 ◽  
Vol 78 ◽  
pp. 1177-1186 ◽  
Author(s):  
J.L. Xie ◽  
Y.B. Tan ◽  
T.N. Wong ◽  
F. Duan ◽  
K.C. Toh ◽  
...  
Keyword(s):  
High Power ◽  
Closed Loop ◽  
Spray Cooling ◽  
Loop System ◽  
Closed Loop System ◽  
Power Devices ◽  
Large Area

scholarly journals Silicon carbide power device characteristics, applications and challenges: an overview

2020 ◽  
Vol 11 (4) ◽  
pp. 2194
Author(s):  
Muhamad Faizal Yaakub ◽  
Mohd Amran Mohd Radzi ◽  
Faridah Hanim Mohd Noh ◽  
Maaspaliza Azri
Keyword(s):  
Silicon Carbide ◽  
System Design ◽  
Power Electronics ◽  
Power Density ◽  
High Power ◽  
System Performance ◽  
Power Device ◽  
Power Devices ◽  
Performance Limitation ◽  
Design Challenges

Silicon (Si) based power devices have been employed in most high power applications since decades ago. However, nowadays, most major applications demand higher efficiency and power density due to various reasons. The previously well-known Si devices, unfortunately, have reached their performance limitation to cover all those requirements. Therefore, Silicon Carbide (SiC) with its unique and astonishing characteristic has gained huge attention, particularly in the power electronics field. Comparing both, SiC presents a remarkable ability to enhance overall system performance and the transition from Si to SiC is crucial. With regard to its importance, this paper provides an overview of the characteristics, advantages, and outstanding capabilities in various application for SiC devices. Furthermore, it is also important to disclose the system design challenges, which are discussed at the end of the paper.

SiC Bipolar Power Devices

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 299-304 ◽  
Author(s):  
T. Paul Chow
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
High Voltage ◽  
High Power ◽  
Recent Progress ◽  
Future Trends ◽  
Market Demand ◽  
Power Devices ◽  
Power Switching ◽  
Schottky Rectifiers

AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

Bulk Growth of Single-Crystal Cubic Silicon Carbide by Vacuum Sublimation Method

1993 ◽  
Vol 32 (Part 2, No. 5A) ◽  
pp. L645-L647 ◽  
Author(s):  
Katsuki Furukawa ◽  
Yoshimitsu Tajima ◽  
Hajime Saito ◽  
Yoshihisa Fujii ◽  
Akira Suzuki ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Vacuum Sublimation ◽  
Bulk Growth ◽  
Sublimation Method ◽  
Cubic Silicon Carbide
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