Contributions of Silicon-Hydride Radicals to Hydrogenated Amorphous Silicon Film Formation in Windowless Photochemical Vapor Deposition System

1994 ◽  
Vol 33 (Part 1, No. 2) ◽  
pp. 950-955 ◽  
Author(s):  
Yoshinori Sawado ◽  
Takeshi Akiyama ◽  
Tomo Ueno ◽  
Koichi Kamisako ◽  
Koichi Kuroiwa ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Film Formation ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Hydride ◽  
Amorphous Silicon Film ◽  
Photochemical Vapor Deposition ◽  
Hydrogenated Amorphous

Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Hong-Seok Choi ◽  
Keun-Ho Jang ◽  
Jhun-Suk Yoo ◽  
Min-Koo Han
Keyword(s):  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

AbstractThe fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

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