Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Hong-Seok Choi ◽  
Keun-Ho Jang ◽  
Jhun-Suk Yoo ◽  
Min-Koo Han
Keyword(s):  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

AbstractThe fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

Material Properties of Sipos Films Prepared by XeCl Excimer Laser Annealing of a-Si:Nx Films

1996 ◽  
Vol 424 ◽  
Author(s):  
Hong-Seok Choi ◽  
Jae-Hong Jun ◽  
Keun-Ho Jang ◽  
Min-Koo Han
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Vapor Deposition ◽  
Material Properties ◽  
Laser Annealing ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Excimer Laser Annealing ◽  
Maximum Value

AbstractThe material properties of laser-annealed a-Si:Nx films were investigated. The a-Si:Nx films for laser-annealing were deposited by rf plasma enhanced chemical vapor deposition (PECVD) with NH3 and SiH4 gas mixtures. At the 0.35 of NH3/SiH4 ratio, the optical band-gap was abruptly increased to 2.82 eV from 2.05 eV by laser-annealing which indicates that Si-N bonding comes to be notable at that ratio. The electrical conductivity showed the maximum value of 4× 10-6 S/cm at the 0.11 of NH3/SiH4 ratio where the grain growth and the increase of Si-N bonding are optimized for the enhancement of electrical conductivity. The σP/σD ratio which is related to the defects states for photo generation centers was decreased with increasing NH 3/SiH 4 ratio. Our experimental data showed that the optical band gap and electrical conductivity of laserannealed a-Si:Nx films were dominantly affected by the NH3/SiH4 ratio at the 250 mJ/cm2 of laser-annealing energy density.

Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
M.J. Williams ◽  
S.M. Cho ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Active Material ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

We have investigated a-Si,N:H alloys as an alternative wide band-gap, photo-active material. The entire alloy range between a-Si:H and a-Si3N4:H can be formed by a remote plasma-enhanced chemical-vapor deposition (PECVD) process. Other studies have demonstrated that a-Si,N:H alloys could be doped to form window materials for p-i-n devices. This paper focuses on alloy materials with E04 bandgaps to about 2.2 eV. We have prepared these a-Si,N:H alloys, characterized their microstructure, and studied their photoconductivity, sensitivity to light-soaking and transport properties. For example, with increased alloying we show that i) the white-light photoconductivity and ii) the kinetics and magnitude of the decay of photoconducitivity under intense illumination (the Staebler-Wronski effect), are about the same as for PV-grade a-Si:H.

Effect of B Boping Concentration on the Properties of P-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 239-242 ◽  
pp. 247-251
Author(s):  
Wei Yuan Wang ◽  
Qing Nan Zhao ◽  
Wen Hui Yuan ◽  
Pu Lei Yang ◽  
Hong Yu Liang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Float Glass ◽  
B Doping ◽  
P Type ◽  
Hydrogenated Amorphous

P-type hydrogenated amorphous silicon films were deposited on float glass substrates by plasma enhanced chemical vapor deposition (PECVD). The effect of B doping concentration on the properties of the films was studied. The structure of the films was investigated by X-ray diffraction (XRD). The transmittance of the films was measured using an UV–Vis–NIR spectrophotometer in the wavelength range 200–2600nm.The film thickness was fitted by NKD-7000W optical thin film analysis system. The optical band gap of the films was obtained by the Tauc method. The conductivity of the films was tested by Electrometer Keithley 6517B. The results show that the optical band gap of the films changes from 1.93 eV to 1.65eV with the increase of B doping concentration, the highest conductivity of the film doped with 1.86% B2H6is 7.82 × 10-4S/cm.

Sign in / Sign up

Export Citation Format

Share Document