Electrical Properties of AlGaAs/GaAs Two-Dimensional Electron Gases (2DEGs) Grown on GaAs Substrates Cleaned by an Electron Cyclotron Resonance (ECR) Hydrogen Plasma

Hydrogen Plasma ◽

Electron Cyclotron ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Gaas Substrates

Preparation of transparent Nb/two-dimensional electron gas contacts by using electron cyclotron resonance plasma cleaning

Journal of Applied Physics ◽

10.1063/1.1290256 ◽

2000 ◽

Vol 88 (7) ◽

pp. 4440 ◽

Cited By ~ 4

Author(s):

Th. Schäpers ◽

R. P. Müller ◽

G. Crecelius ◽

H. Hardtdegen ◽

H. Lüth

Keyword(s):

Cyclotron Resonance ◽

Electron Gas ◽

Electron Cyclotron ◽

Plasma Cleaning ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas ◽

Direct Growth of AlGaAs/GaAs Single Quantum Wells on GaAs Substrates Cleaned by Electron Cyclotron Resonance (ECR) Hydrogen Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l91 ◽

1994 ◽

Vol 33 (Part 2, No. 1B) ◽

pp. L91-L93 ◽

Cited By ~ 14

Author(s):

Naoto Kondo ◽

Yasushi Nanishi ◽

Masatomo Fujimoto

Keyword(s):

Quantum Wells ◽

Cyclotron Resonance ◽

Hydrogen Plasma ◽

Electron Cyclotron ◽

Single Quantum ◽

Gaas Substrates ◽

Direct Growth

Linewidth anomaly of two-dimensional-electron cyclotron resonance in the extreme quantum limit

Physical Review B ◽

10.1103/physrevb.40.1716 ◽

1989 ◽

Vol 40 (3) ◽

pp. 1716-1719 ◽

Cited By ~ 8

Author(s):

C. T. Liu ◽

P. Mensz ◽

D. C. Tsui ◽

G. Weimann

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron ◽

Quantum Limit ◽

Two Dimensional ◽

Dimensional Electron

Two-dimensional numerical model of electron cyclotron resonance discharge with pointwise mappings

Review of Scientific Instruments ◽

10.1063/1.2166429 ◽

2006 ◽

Vol 77 (3) ◽

pp. 03A345

Author(s):

V. Eruhimov ◽

V. Semenov

Keyword(s):

Numerical Model ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Two Dimensional

Structural and electrical properties of thin microcrystalline silicon films deposited by an electron cyclotron resonance plasma discharge of 2% SiH4/Ar further diluted in H2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581481 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2751-2756 ◽

Cited By ~ 11

Author(s):

B. B. Jagannathan ◽

R. L. Wallace ◽

W. A. Anderson

Keyword(s):

Electrical Properties ◽

Cyclotron Resonance ◽

Plasma Discharge ◽

Electron Cyclotron ◽

Silicon Films ◽

Microcrystalline Silicon ◽

Electron Cyclotron Resonance Plasma ◽

Structural And Electrical Properties ◽

2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) ◽

Resistive Switching Effect in Thermal SiO2 Films Treated in Electron-Cyclotron Resonance Hydrogen Plasma

10.1109/edm52169.2021.9507691 ◽

2021 ◽

Author(s):

Ramin Iskhakzay ◽

Vitalii Voronkovskii ◽

Vladimir Aliev ◽

Vladimir Gritsenko

Keyword(s):

Resistive Switching ◽

Cyclotron Resonance ◽

Hydrogen Plasma ◽

Electron Cyclotron ◽

Switching Effect ◽

Sio2 Films ◽

Resistive Switching Effect

Electrical properties of electron cyclotron resonance plasma-deposited silicon dioxide: effect of the oxygen to silane flow ratio

Semiconductor Science and Technology ◽

10.1088/0268-1242/11/3/023 ◽

1996 ◽

Vol 11 (3) ◽

pp. 422-426 ◽

Cited By ~ 6

Author(s):

M J Hernandez ◽

J Garrido ◽

J Martinez ◽

J Piqueras

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Flow Ratio ◽

Electron Cyclotron Resonance Plasma ◽

Investigations on electrical properties of a-C:H thin films deposited in a Microwave Multipolar Plasma reactor excited at Distributed Electron Cyclotron Resonance

Diamond and Related Materials ◽

10.1016/j.diamond.2008.01.036 ◽

2008 ◽

Vol 17 (7-10) ◽

pp. 1710-1715 ◽

Cited By ~ 6

Author(s):

M. Kihel ◽

R. Clergereaux ◽

D. Escaich ◽

M. Calafat ◽

P. Raynaud ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Cyclotron Resonance ◽

Plasma Reactor ◽

Electron Cyclotron

Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering

Applied Physics A ◽

10.1007/s00339-003-2483-z ◽

2004 ◽

Vol 80 (8) ◽

pp. 1781-1787 ◽

Cited By ~ 13

Author(s):

J. Wang ◽

L. Zhao ◽

N. H.Luu ◽

D. Wang ◽

H. Nakashima

Keyword(s):

Electrical Properties ◽

Oxide Film ◽

Cyclotron Resonance ◽

Gate Dielectrics ◽

Electron Cyclotron ◽

Plasma Sputtering ◽

High K ◽

Structural And Electrical Properties ◽

Experimental study of the hot and warm electron populations in an electron cyclotron resonance argon–oxygen–hydrogen plasma

Physics of Plasmas ◽

10.1063/1.871300 ◽

1995 ◽

Vol 2 (6) ◽

pp. 2138-2140 ◽

Cited By ~ 11

Author(s):

R. Friedlein ◽

S. Herpich ◽

H. Hiller ◽

H. Wirth ◽

G. Zschornack ◽

...

Keyword(s):

Experimental Study ◽

Cyclotron Resonance ◽

Hydrogen Plasma ◽

Electron Cyclotron