Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

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External fields controlling the nonlinear optical properties of quantum cascade laser based on staircase-like quantum wells

Superlattices and Microstructures ◽

10.1016/j.spmi.2021.106885 ◽

2021 ◽

Vol 155 ◽

pp. 106885

Author(s):

Hassen Dakhlaoui ◽

J.A. Vinasco ◽

C.A. Duque

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Quantum Cascade Laser ◽

Nonlinear Optical ◽

Nonlinear Optical Properties ◽

External Fields ◽

Quantum Cascade

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Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

Journal of Nanomaterials ◽

10.1155/2019/5349291 ◽

2019 ◽

Vol 2019 ◽

pp. 1-7

Author(s):

Takuya Kawazu

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Valence Band ◽

Energy Barrier ◽

Heavy Hole ◽

Electronic States ◽

Light Hole ◽

Photoluminescence Excitation ◽

Band Mixing ◽

Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

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Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab0407 ◽

2019 ◽

Vol 58 (SC) ◽

pp. SCCB09 ◽

Cited By ~ 2

Author(s):

George M. Christian ◽

Stefan Schulz ◽

Simon Hammersley ◽

Menno J. Kappers ◽

Martin Frentrup ◽

...

Keyword(s):

Optical Properties ◽

Field Strength ◽

Electric Field ◽

Quantum Wells ◽

Electric Field Strength ◽

Single Quantum ◽

Total Electric Field

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Study of electron-related intersubband optical properties in three coupled quantum wells wires with triangular transversal section

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.05.038 ◽

2015 ◽

Vol 87 ◽

pp. 131-136 ◽

Cited By ~ 3

Author(s):

A. Tiutiunnyk ◽

V. Tulupenko ◽

V. Akimov ◽

R. Demediuk ◽

A.L. Morales ◽

...

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Coupled Quantum Wells ◽

Transversal Section

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Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

Journal of Applied Physics ◽

10.1063/1.348908 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7942-7944 ◽

Cited By ~ 3

Author(s):

K. T. Shiralagi ◽

R. A. Puechner ◽

K. Y. Choi ◽

R. Droopad ◽

G. N. Maracas

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

Gas Source

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LINEAR AND NONLINEAR INTERSUBBAND OPTICAL ABSORPTION OF FINITE AND INFINITE SEMI-PARABOLIC QUANTUM WELLS

Modern Physics Letters B ◽

10.1142/s0217984911025882 ◽

2011 ◽

Vol 25 (07) ◽

pp. 497-507 ◽

Cited By ~ 1

Author(s):

M. J. KARIMI ◽

A. KESHAVARZ ◽

A. POOSTFORUSH

Keyword(s):

Refractive Index ◽

Optical Properties ◽

Optical Absorption ◽

Quantum Well ◽

Quantum Wells ◽

Resonant Peak ◽

Energy Eigenvalues ◽

Finite Case ◽

Infinite Case ◽

Index Changes

In this work, the optical absorption coefficients and the refractive index changes for the infinite and finite semi-parabolic quantum well are calculated. Numerical calculations are performed for typical GaAs / Al x Ga 1-x As semi-parabolic quantum well. The energy eigenvalues and eigenfunctions of these systems are calculated numerically. Optical properties are obtained using the compact density matrix approach. Results show that the energy eigenvalues and the matrix elements of the infinite and finite cases are different. The calculations reveal that the resonant peaks of the optical properties of the finite case occur at lower values of the incident photon energy with respect to the infinite case. Results indicate that the maximum value of the refractive index changes for the finite case are greater than that of the infinite case. Our calculations also show that in contrast to the infinite case, the resonant peak value of the total absorption coefficient in the case of the finite well is a non-monotonic function of the semi-parabolic confinement frequency.

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