X-Ray Photoelectron Spectroscopic Observation on the Formation of Carbon Nitride Thin Films Produced by Low-Energy Nitrogen Ion Implantation

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4540-4544 ◽  
Author(s):  
Iwao Shimoyama ◽  
Tetsuhiro Sekiguchi ◽  
Yuji Baba
2001 ◽  
Vol 304 (1-4) ◽  
pp. 175-180 ◽  
Author(s):  
K. Senthil ◽  
D. Mangalaraj ◽  
Sa.K. Narayandass ◽  
R. Kesavamoorthy ◽  
G.L.N. Reddy ◽  
...  

1998 ◽  
Vol 16 (2) ◽  
pp. 477-481 ◽  
Author(s):  
Yong Tae Kim ◽  
Chul Soon Kwon ◽  
Dong Joon Kim ◽  
Jong-Wan Park ◽  
Chang Woo Lee

2002 ◽  
Vol 750 ◽  
Author(s):  
Yuka Nasu ◽  
Masami Aono ◽  
Shinichiro Aizawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe

ABSTRACTCarbon nitride (CNx) thin films have been prepared by hot carbon filament chemical vapor deposition, and the nitrogen content in the films is approximately 0.05. The CNx films have been irradiated by 0.1 keV nitrogen ions to increase the nitrogen content after deposition. The nitrogen content in the CNx films was obtained with X-ray photoelectron spectroscopy. Scanning electron microscopy was employed to study microstructures of the films. The experimental results show that nitrogen ions are chemically combined with the CNx films and as a result the nitrogen content increases up to approximately 0.30. Furthermore, it is found that nitrogen ions change the film microstructures and sputter the surfaces of CNx films.


Wear ◽  
1999 ◽  
Vol 225-229 ◽  
pp. 1148-1158 ◽  
Author(s):  
A.V Byeli ◽  
V.A Kukareko ◽  
I.V Boyarenko ◽  
A.A Kolesnikova

Sign in / Sign up

Export Citation Format

Share Document