Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 501-506 ◽  
Author(s):  
Rui Morimoto ◽  
Akira Izumi ◽  
Atsushi Masuda ◽  
Hideki Matsumura
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Thin Films ◽  
Phosphorus Doped

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Growth of “New Form” of Polycrystalline Silicon Thin Films Synthesized by Hot Wire Chemical Vapor Deposition

2005 ◽  
Vol 862 ◽  
Author(s):  
A. R. Middya ◽  
J-J. Liang ◽  
K. Ghosh
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Crystallographic Structure ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Vapor Deposition Technique ◽  
New Form

AbstractIn this work, we report on next-generation hot wire chemical vapor deposition technique, we call it ceramics hot-wire CVD. Using a new concept of rectangular ceramics filament holder and “confinement of thermal radiation from the filament”, a “new form” of polycrystalline silicon thin films has been developed at low temperature (˜ 250°C). The grains are found to be symmetrically distributed in array along the parallel lines, in (111) direction. On the surface of individual grains, “five-fold” and “six-fold” symmetries have been observed and we suspect that we developed “buckyball” type “giant silicon molecular solids” with different crystalline silicon lattice other than standard single-crystal silicon structure. We observed rarely found “icosaderal” symmetry in silicon thin films. This hypothesis has been supported by multiple Raman active transverse optical modes and the crystallographic structure analyzed by X-ray diffraction.

Control of Orientation for Polycrystalline Silicon Thin Films Fabricated from Fluorinated Source Gas by Microwave Plasma Enhanced Chemical Vapor Deposition

1998 ◽  
Vol 37 (Part 2, No. 9A/B) ◽  
pp. L1026-L1029 ◽  
Author(s):  
Kouichi Nakahata ◽  
Atsushi Miida ◽  
Toshio Kamiya ◽  
Yoshiteru Maeda ◽  
Charles M. Fortmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Silicon Thin Films

The Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250°C

1997 ◽  
Vol 472 ◽  
Author(s):  
Yeu-Long Jiang ◽  
Ruo-Yu Wang ◽  
Huey-Liang Hwang ◽  
Tri-Rung Yew
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Dopant Concentration ◽  
Chemical Vapor ◽  
Silicon Thin Films

AbstractThe phosphorus doped polycrystalline silicon thin films were grown by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) at 250°C. The doping gas PH3 was in-situ added with SiH4 gas during the films deposition. All films were deposited with 90% hydrogen dilution ratio. The resistivity of the films is varied from 0.2 to 7Ω-cm and decrease as the PH3/SiH4 gas ratio increase from (3/100 to 7/100). From the SIMS data, the doping concentration is all about 1020cm-3. The activation energy is decreased from 0.35 eV to 0.12 eV as the dopant concentration increased from 0.8×10 20cm-3 to 4.7×10 20cm-3. From the Hall measurements, the carrier mobility is about 2∼4 cm2/V. sec, and the carrier concentration is the 0.5∼1% of the dopant concentration. The gain boundary trap density predicted by the trapping model is about 4×l013cm” 2-2

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