A Fabrication of Very Low Contact Resistance AlGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy

2002 ◽  
Vol 41 (Part 2, No. 7B) ◽  
pp. L820-L822 ◽  
Author(s):  
Seikoh Yoshida ◽  
Delian Wang ◽  
Masakazu Ichikawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Selective Area Growth ◽  
Growth Technique ◽  
Gas Source ◽  
Selective Area ◽  
Area Growth ◽  
Effect Transistor

Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy

2002 ◽  
Vol 243 (1) ◽  
pp. 129-133 ◽  
Author(s):  
Koji Kawasaki ◽  
Ikuo Nakamatsu ◽  
Hideki Hirayama ◽  
Kazuo Tsutsui ◽  
Yoshinobu Aoyagi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Ammonia Gas ◽  
Gas Source ◽  
Selective Area ◽  
Area Growth

Selective area growth of GaN using gas source molecular beam epitaxy

2000 ◽  
Vol 29 (3) ◽  
pp. 322-324 ◽  
Author(s):  
V. K. Gupta ◽  
K. L. Averett ◽  
M. W. Koch ◽  
B. L. McIntyre ◽  
G. W. Wicks
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Gas Source ◽  
Selective Area ◽  
Area Growth

Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique

2019 ◽  
Vol 511 ◽  
pp. 73-78 ◽  
Author(s):  
Hiroto Sekiguchi ◽  
Kohei Date ◽  
Tomohiko Imanishi ◽  
Hiroki Tateishi ◽  
Keisuke Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Selective Area Growth ◽  
Growth Technique ◽  
Selective Area ◽  
Area Growth
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