Characterization and Comparison of Strained Si1-yCyMetal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method

Tatsuro Watahiki; Hanae Ishihara; Katsuya Abe; Akira Yamada; Makoto Konagai

doi:10.1143/jjap.43.1882

Characterization and Comparison of Strained Si1-yCyMetal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1882 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 1882-1885

Author(s):

Tatsuro Watahiki ◽

Hanae Ishihara ◽

Katsuya Abe ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Hot Wire ◽

Cell Method ◽

Gas Source ◽

Effect Transistor

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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si[sub 1−x]Ge[sub x] step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2713119 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1098 ◽

Cited By ~ 13

Author(s):

Michael M. Oye ◽

Davood Shahrjerdi ◽

Injo Ok ◽

Jeffrey B. Hurst ◽

Shannon D. Lewis ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Molecular Beam Epitaxy Growth ◽

Silicon Substrates ◽

Effect Transistor

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Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Cited By ~ 4

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Gas source molecular beam epitaxy growth and characterization of modulation-doped field-effect transistor structures

Semiconductor Science and Technology ◽

10.1088/0268-1242/12/11/025 ◽

1997 ◽

Vol 12 (11) ◽

pp. 1472-1478 ◽

Cited By ~ 3

Author(s):

Cengiz Besikci ◽

Yavuz Civan ◽

Serhat Ozder ◽

Ozlem Sen ◽

Chris Jelen ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Molecular Beam Epitaxy Growth ◽

Gas Source ◽

Effect Transistor

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A Fabrication of Very Low Contact Resistance AlGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l820 ◽

2002 ◽

Vol 41 (Part 2, No. 7B) ◽

pp. L820-L822 ◽

Cited By ~ 9

Author(s):

Seikoh Yoshida ◽

Delian Wang ◽

Masakazu Ichikawa

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Selective Area Growth ◽

Growth Technique ◽

Gas Source ◽

Selective Area ◽

Area Growth ◽

Effect Transistor

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Molecular beam epitaxy growth of InAs and In[sub 0.8]Ga[sub 0.2]As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2912086 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1187

Author(s):

Ning Li ◽

Eric S. Harmon ◽

David B. Salzman ◽

Dmitri N. Zakharov ◽

Jong-Hyeok Jeon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Molecular Beam Epitaxy Growth ◽

Effect Transistor

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Novel high mobility Ga0.51In0.49P/GaAs modulation‐doped field‐effect transistor structures grown using a gas source molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.350768 ◽

1992 ◽

Vol 71 (9) ◽

pp. 4632-4634 ◽

Cited By ~ 11

Author(s):

Z. P. Jiang ◽

P. B. Fischer ◽

S. Y. Chou ◽

M. I. Nathan

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

High Mobility ◽

Gas Source ◽

Effect Transistor

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Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590709 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1139 ◽

Cited By ~ 1

Author(s):

H. C. Kuo ◽

B. G. Moser ◽

H. Hsia ◽

Z. Tang ◽

M. Feng ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Schottky Barrier ◽

Field Effect ◽

High Performance ◽

Molecular Beam ◽

Field Effect Transistor ◽

Enhancement Layer ◽

Gas Source ◽

Effect Transistor

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Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4812793 ◽

2013 ◽

Vol 31 (4) ◽

pp. 041203 ◽

Cited By ~ 8

Author(s):

Yan Zhu ◽

Mantu K. Hudait ◽

Dheeraj K. Mohata ◽

Bijesh Rajamohanan ◽

Suman Datta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

P Type

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n-AlInAs/(InAs)3(GaAs)1 superlattice modulation-doped field effect transistor grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19900578 ◽

1990 ◽

Vol 26 (13) ◽

pp. 885 ◽

Cited By ~ 4

Author(s):

N. Nishiyama ◽

H. Yana ◽

S. Nakajima ◽

H. Hayashi

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Effect Transistor

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Novel carbon‐dopedp‐channel GaAs metal‐semiconductor field‐effect transistor grown by metalorganic molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.349357 ◽

1991 ◽

Vol 70 (5) ◽

pp. 2885-2886 ◽

Cited By ~ 5

Author(s):

F. Ren ◽

C. R. Abernathy ◽

S. J. Pearton

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Metalorganic Molecular Beam Epitaxy ◽

Effect Transistor

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