Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy
1999 ◽
Vol 17
(3)
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pp. 1139
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1997 ◽
Vol 12
(11)
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pp. 1472-1478
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2002 ◽
Vol 41
(Part 2, No. 7B)
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pp. L820-L822
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Keyword(s):
2013 ◽
Vol 31
(4)
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pp. 041203
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Keyword(s):
Keyword(s):
1984 ◽
Vol 5
(7)
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pp. 285-287
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Keyword(s):