Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2309-2312 ◽  
Author(s):  
Dong-Hyun Cho ◽  
Mitsuaki Shimizu ◽  
Toshihide Ide ◽  
Byoungrho Shim ◽  
Hajime Okumura
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Contact Process ◽  
Effect Transistor ◽  
Gan Heterostructure

Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact

2002 ◽  
Vol 46 (5) ◽  
pp. 695-698 ◽  
Author(s):  
Chang Min Jeon ◽  
Ho Won Jang ◽  
Kyoung Jin Choi ◽  
Sung-Bum Bae ◽  
Jung-Hee Lee ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Gan Heterostructure

5A 1300V Trenched and Implanted 4H-SiC Vertical JFET

2012 ◽  
Vol 229-231 ◽  
pp. 824-827 ◽  
Author(s):  
Gang Chen ◽  
Xiao Feng Song ◽  
Song Bai ◽  
Li Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Drain Current ◽  
Gate Bias ◽  
Blocking Voltage ◽  
Drain Bias ◽  
Effect Transistor ◽  
Lift Off

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device’s current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ•cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device’s ohmic contact.

scholarly journals High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

2019 ◽  
Vol 115 (1) ◽  
pp. 012104 ◽  
Author(s):  
Dongjea Seo ◽  
Dong Yun Lee ◽  
Junyoung Kwon ◽  
Jea Jung Lee ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
High Performance ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Monolayer Mos2 ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene ◽  
Effect Transistor

On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

2012 ◽  
Vol 33 (6) ◽  
pp. 788-790 ◽  
Author(s):  
Chien-Chang Huang ◽  
Huey-Ing Chen ◽  
Tai-You Chen ◽  
Chi-Shiang Hsu ◽  
Chun-Chia Chen ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Electroless Plating ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Hydrogen Gas ◽  
Effect Transistor ◽  
Gan Heterostructure
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