High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L217-L219 ◽  
Author(s):  
Toru Ujihara ◽  
Kazuo Obara ◽  
Noritaka Usami ◽  
Kozo Fujiwara ◽  
Gen Sazaki ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
High Quality

Extremely Low Temperature Silicon Liquid Phase Epitaxy

1995 ◽  
Vol 386 ◽  
Author(s):  
M. Konuma ◽  
I. Silier ◽  
A. Gutjahr ◽  
E. Bauser ◽  
F. Banhart ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Hydrofluoric Acid ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Extended Defects ◽  
Glass Substrates ◽  
Nano Crystalline ◽  
Amorphous Glass ◽  
Substrate Surfaces

ABSTRACTBy liquid phase epitaxy (LPE) we have grown silicon layers on silicon and partially masked silicon at temperatures below 450 °C from Ga and Ga-In solutions. Oxidation of the cleaned silicon substrate surfaces before epitaxial growth has been prevented by a buffered hydrofluoric acid treatment. The epitaxial layers reached a thickness of 7 jim and were free of extended defects.Low growth temperatures make it possible to grow silicon layers also on pre-treated glass substrates. The amorphous glass is first coated with a thin nano-crystalline silicon layer which is deposited by plasma processes from a mixture of SiH4/H2 gas. The grains in the silicon layers grown from Ga solution on glass have reached sizes up to 100 μm.

(Invited) Electrochemical Liquid Phase Epitaxy of Crystalline Silicon Films

2021 ◽  
Vol MA2021-01 (24) ◽  
pp. 930-930
Author(s):  
Stephen Maldonado ◽  
Nathanael Downes
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystalline Silicon ◽  
Silicon Films

Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy

1992 ◽  
Vol 35 (4) ◽  
pp. 523-528 ◽  
Author(s):  
Meng-Chyi Wu ◽  
Chi-Ching Chen ◽  
Ching-Ting Lee
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

(Invited) Fabrication of High-Quality Ge-on-Insulator Structures by Lateral Liquid Phase Epitaxy

2015 ◽  
Vol 69 (5) ◽  
pp. 305-311 ◽  
Author(s):  
T. Shimura ◽  
Y. Suzuki ◽  
M. Matsue ◽  
K. Kajimura ◽  
K. Tominaga ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy

2004 ◽  
Vol 266 (4) ◽  
pp. 467-474 ◽  
Author(s):  
Toru Ujihara ◽  
Eiji Kanda ◽  
Kazuo Obara ◽  
Kozo Fujiwara ◽  
Noritaka Usami ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Silicon Thin Films

Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

CrystEngComm ◽  
2016 ◽  
Vol 18 (4) ◽  
pp. 608-615 ◽  
Author(s):  
F. Riva ◽  
P.-A. Douissard ◽  
T. Martin ◽  
F. Carlà ◽  
Y. Zorenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
X Ray

High quality and dense GdLuAP:Eu scintillating screens have been successfully grown using liquid phase epitaxy showing superior imaging performances as compared the currently used GGG films.

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