Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (II) –Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping–

2004 ◽  
Vol 43 (4A) ◽  
pp. 1247-1253 ◽  
Author(s):  
Katsuhiko Nakai ◽  
Koichi Kitahara ◽  
Yasumitsu Ohta ◽  
Atsushi Ikari ◽  
Masahiro Tanaka
Keyword(s):  
Crystal Growth ◽  
Growth Condition ◽  
Epitaxial Layer ◽  
Silicon Substrate ◽  
Crystal Defects ◽  
Nitrogen Doped ◽  
Co Doping ◽  
Crystal Growth Condition

Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (I) –Investigation of the Crystallographic Structure–

2004 ◽  
Vol 43 (4A) ◽  
pp. 1241-1246 ◽  
Author(s):  
Katsuhiko Nakai ◽  
Koichi Kitahara ◽  
Yasumitsu Ohta ◽  
Atsushi Ikari ◽  
Masahiro Tanaka
Keyword(s):  
Epitaxial Layer ◽  
Silicon Substrate ◽  
Crystal Defects ◽  
Crystallographic Structure ◽  
Nitrogen Doped

Optimal crystal growth condition of ZnSe grown by molecular beam epitaxy

1988 ◽  
Vol 91 (4) ◽  
pp. 617-622 ◽  
Author(s):  
K. Imai ◽  
K. Kumazaki ◽  
T. Haga ◽  
Y. Abe
Keyword(s):  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Growth Condition ◽  
Molecular Beam ◽  
Crystal Growth Condition

scholarly journals Crystal growth condition dependence of local structure around Gd in GaN nanotods

2008 ◽  
Vol 64 (a1) ◽  
pp. C593-C593
Author(s):  
S. Emura ◽  
H. Kameoka ◽  
H. Tambo ◽  
Y.-K. Zhou ◽  
S. Hasegawa ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Growth Condition ◽  
Local Structure ◽  
Condition Dependence ◽  
Crystal Growth Condition

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

scholarly journals Elongated Wire-Like Zinc Oxide Nanostructures Synthesized from Metallic Zinc

2012 ◽  
Vol 15 (1) ◽  
pp. 19 ◽  
Author(s):  
El-Shazly M. Duraia ◽  
G.W. Beall ◽  
Zulkhair A. Mansurov ◽  
Tatyana A. Shabanova ◽  
Ahmed E. Hannora
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Silicon Substrate ◽  
Gas Flow ◽  
Flow Direction ◽  
Crystal Defects ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Metallic Zinc ◽  
Zinc Oxide Nanostructures

Elongated wire-like Zinc oxide, nanocombs and nanocrystals have been successfully synthesized on the silicon substrate from the metallic zinc as a starting material. The annealing temperature was as low as 450 ºC in argon atmosphere mixed with about 3% oxygen. Structural analysis using the X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) showed that the existence of two phases; nanowires and crystalline form. Moreover some nanoparticles aggregates were noticed to be attached in the bulk to the sides of the ZnO nanocrystals and sometimes these aggregate attached to the Zinc oxide hexagonal crystal and grow to form nanowire at different angles. Scanning electron microscopy (SEM) investigations for the zinc oxide nanostructure on the silicon substrate showed the formation of the nanocrystals in the gas flow direction and at the low energy sites over the silicon substrate. Photoluminescence (PL) measurements, performed at the room temperature, showed the existence of two basic emissions: narrow ultraviolet (UV) emission at 398 nm which attributed to the near band edge emission of the wide band gap and a very wide, more intensive, green emission at 471 nm corresponds to the crystal defects such as vacancies, interstitial sites in ZnO.

Single crystal growth and characterization of indium and nitrogen doped GaAs

1991 ◽  
Vol 70 (3) ◽  
pp. 159-163
Author(s):  
F. Moravec ◽  
B. Štepánek ◽  
P. Doubrava
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Nitrogen Doped

Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum

2018 ◽  
Vol 646 ◽  
pp. 173-179
Author(s):  
Soo Bin Kim ◽  
Seung Hyun Lee ◽  
Hae Jun Jung ◽  
Myung Su Seo ◽  
Sung Min Kim ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Epitaxial Layer ◽  
Silicon Substrate

Density of RDX Crystals Grown During High Acceleration in an Ultracentrifuge

2005 ◽  
Vol 896 ◽  
Author(s):  
Mary Y. D. Lanzerotti ◽  
Richard Z. Squillace ◽  
Alexander Gandzelko ◽  
Jagadish Sharma
Keyword(s):  
Crystal Growth ◽  
Maximum Density ◽  
Crystal Defects ◽  
Commercial Grade ◽  
Theoretical Maximum ◽  
High Acceleration ◽  
Cyclotrimethylene Trinitramine ◽  
Crystal Density ◽  
Defect Content ◽  
Solvent Molecules

AbstractRDX (cyclotrimethylene-trinitramine) crystals were grown during high acceleration (high g) in an ultracentrifuge. These crystals are found to have a density ∼0.6% greater than 1 g crystals and to have a greatly reduced defect content. The high g crystals should therefore have significantly reduced shock sensitivity as compared to commercial grade RDX. When a RDX saturated acetone solution is accelerated at 200,000 g, the RDX solute molecules move individually through the acetone solvent molecules to form a RDX crystal because the density of the RDX (Theoretical Maximum Density 1.806 g/cc) solute is more dense than the acetone (0.79 g/cc)solvent. Crystal growth is controlled by the g-force. Crystal defects including voids and solution inclusions caused by temperature variation or evaporation at 1 g are minimized and the RDX crystal density increases. A nitrogen pycnometer was used to measure the density of the RDX crystals grown at 1 g and at 200,000 g. The density of the RDX crystals grown at 200,000 g (1.7980±0.0003 g/cc) is found to be greater than the density of RDX crystals grown at 1 g (1.7881±0.0003 g/cc) by 0.0099 g/cc. The density of the high g crystal is 99.6% of the Theoretical Maximum Density of RDX.

Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities

2012 ◽  
Vol 725 ◽  
pp. 221-226
Author(s):  
Gudrun Kissinger ◽  
Georg Raming ◽  
Reinhold Wahlich ◽  
Timo Müller
Keyword(s):  
Wafer Surface ◽  
Diffusion Annealing ◽  
Interstitial Oxygen ◽  
Diffusion Anneal ◽  
Gate Oxides ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Co Doping ◽  
Defect Zone ◽  
Co Doped

An internally gettering bulk defect zone and a defect denuded zone of at least 5 µm below the wafer surface were generated by out-diffusion of interstitial oxygen during annealing at temperatures in the range 1075-1100 °C in argon atmosphere. The CZ silicon material used was optimized with respect to voids and contained a central OSF region and an outer Pv region. Due to co-doping of at least 3×1013cm-3nitrogen, a laterally homogeneous bulk microdefect density was obtained which is independent of the temperature of the out-diffusion anneal. The internal getter created in this way efficiently getters nickel impurities as demonstrated in a getter test with 6.6×1011cm-3of intentional Ni contamination. In the central OSF region of the as-grown nitrogen co-doped wafers, the nuclei capable of generating OSFs also degrade the gate oxide integrity. Out-diffusion annealing at 1075-1100°C dissolves most of the defects capable of generating OSFs and it strongly improves the integrity of 5 nm gate oxides.

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