Three-Dimensional Simulation of the Effect of E-Beam Lithography Induced Line-Edge Roughness on N-Type Metal-Oxide-Semiconductor Transistor Electrical Characteristics for a 50 nm Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.3838 ◽

2004 ◽

Vol 43 (6B) ◽

pp. 3838-3842 ◽

Author(s):

Pascal Scheiblin ◽

Johann Foucher

Keyword(s):

Metal Oxide ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Line Edge Roughness ◽

Edge Roughness ◽

Dimensional Simulation

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Additional-Body Effects in a Self-Aligned Deca-Nanometer Ultrathin-Body and Buried Oxide Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor: A Three-Dimensional Simulation Study

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.110210 ◽

2011 ◽

Vol 50 (11R) ◽

pp. 110210 ◽

Author(s):

Jyi-Tsong Lin ◽

Yi-Chuen Eng ◽

Cheng-Hsin Chen ◽

Yi-Hsuan Fan

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Dimensional Simulation

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Additional-Body Effects in a Self-Aligned Deca-Nanometer Ultrathin-Body and Buried Oxide Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor: A Three-Dimensional Simulation Study

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.110210 ◽

2011 ◽

Vol 50 ◽

pp. 110210

Author(s):

Jyi-Tsong Lin ◽

Yi-Chuen Eng ◽

Cheng-Hsin Chen ◽

Yi-Hsuan Fan

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Dimensional Simulation

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Three-Dimensional Integration of Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical Hybrid Reconfigurable Circuits

IEEE Electron Device Letters ◽

10.1109/led.2015.2455556 ◽

2015 ◽

Vol 36 (9) ◽

pp. 887-889 ◽

Author(s):

Woo Young Choi ◽

Yong Jun Kim

Keyword(s):

Metal Oxide ◽

Three Dimensional ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Reconfigurable Circuits

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Fundamental Study of Complementary Metal Oxide Semiconductor Image Sensor for Three-Dimensional Image Processing System

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c077 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C077 ◽

Author(s):

Kenji Makita ◽

Kouji Kiyoyama ◽

Takeaki Sugimura ◽

Kang Wook Lee ◽

Takafumi Fukushima ◽

...

Keyword(s):

Image Processing ◽

Metal Oxide ◽

Three Dimensional ◽

Processing System ◽

Complementary Metal Oxide Semiconductor ◽

Image Sensor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fundamental Study ◽

Dimensional Image

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High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors

Microelectronic Engineering ◽

10.1016/j.mee.2006.01.270 ◽

2006 ◽

Vol 83 (4-9) ◽

pp. 1740-1744 ◽

Author(s):

Hideo Sunami ◽

Shunpei Matsumura ◽

Koji Yoshikawa ◽

Kiyoshi Okuyama

Keyword(s):

Aspect Ratio ◽

Metal Oxide ◽

Structure Formation ◽

High Aspect Ratio ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Aspect Ratio Structure

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A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dc01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DC01 ◽

Author(s):

Tetsuro Hayashida ◽

Yongxun Liu ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Shinich O'uchi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gas Flow ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Nitrogen Gas ◽

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