scholarly journals Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors

2004 ◽  
Vol 43 (12) ◽  
pp. 7984-7992 ◽  
Author(s):  
Joan Marc Rafí ◽  
Abdelkarim Mercha ◽  
Eddy Simoen ◽  
Kiyoteru Hayama ◽  
Cor Claeys
Keyword(s):  
Field Effect Transistors ◽  
Drain Current ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Back Gate ◽  
Radiation Induced ◽  
Thin Gate Oxide ◽  
Current Transients

Novel Silicon On Insulator Metal Oxide Semiconductor Field Effect Transistors with Buried Back Gate

2004 ◽  
Vol 43 (4B) ◽  
pp. 2140-2144 ◽  
Author(s):  
Hyuckjae Oh ◽  
Hoon Choi ◽  
Takeshi Sakaguchi ◽  
JeoungChill Shim ◽  
Hiroyuki Kurino ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Back Gate
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