scholarly journals Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential

2005 ◽  
Vol 44 (9A) ◽  
pp. 6508-6509 ◽  
Author(s):  
M. Jagadesh Kumar ◽  
G. Venkateshwar Reddy
Keyword(s):  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Step Potential ◽  
Back Gate ◽  
Channel Effects

Examining the Short Channel Characteristic and Performance of Triple Material Double Gate Silicon-on-Nothing Metal Oxide Semiconductor Field Effect Transistors with Grading Channel Concentration

2019 ◽  
Vol 14 (12) ◽  
pp. 1672-1679 ◽  
Author(s):  
Ningombam Ajit Kumar ◽  
Aheibam Dinamani Singh ◽  
Nameirakpam Basanta Singh
Keyword(s):  
Surface Potential ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel Effects ◽  
Parabolic Approximation ◽  
Short Channel ◽  
Channel Characteristic ◽  
Channel Effects ◽  
And Performance

A 2D surface potential analytical model of a channel with graded channel triple material double gate (GCTMDG) Silicon-on-Nothing (SON) MOSFET is proposed by intermixing the benefits of triple material in gate engineering and graded doping in the channel. The surface potential distribution function of the GCTMDG SON MOSFET is obtained by solving the Poisson's equation, applying suitable boundary conditions, and using a parabolic approximation method. It is seen in the proposed device that the Short Channel Effects (SCEs) are subdued due to the apprehensible step in the surface potential profile that screen the potential of the drain. The effects of the various device parameters are studied to check the merit of the device. For the validation of the proposed device, it is compared with the simulated results of ATLASTM, a device simulator from SILVACO.

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