Simulation Method for Buried Oxide Formation of Separation by Implanted Oxygen Structure during Post-Implantation Thermal Annealing

2005 ◽  
Vol 44 (4B) ◽  
pp. 2380-2384 ◽  
Author(s):  
Motoi Nakao ◽  
Koichi Sudoh ◽  
Hirofumi Iikawa ◽  
Hiroshi Iwasaki ◽  
Katsutoshi Izumi
Keyword(s):  
Thermal Annealing ◽  
Simulation Method ◽  
Oxide Formation ◽  
Buried Oxide ◽  
Post Implantation

Development of Simulation Method for Buried Oxide Formation of SIMOX Structure During Post-Implantation Thermal Annealing

2004 ◽  
Author(s):  
Motoi Nakao ◽  
Koichi Sudoh ◽  
Hirofumi Iikawa ◽  
Hiroshi Iwasaki ◽  
Katsutoshi Izumi
Keyword(s):  
Thermal Annealing ◽  
Simulation Method ◽  
Oxide Formation ◽  
Buried Oxide ◽  
Post Implantation

scholarly journals Buried Oxide Formation in Low-Dose Low-Energy SIMOX

2003 ◽  
Vol 9 (S02) ◽  
pp. 504-505
Author(s):  
Tula Jutarosaga ◽  
Jun Sik Jeoung ◽  
Supapan Seraphin
Keyword(s):  
Low Dose ◽  
Low Energy ◽  
Oxide Formation ◽  
Buried Oxide

Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure

2002 ◽  
Vol 41 (Part 1, No. 5A) ◽  
pp. 2878-2880
Author(s):  
Wei-Cheng Hsu ◽  
Mong-Song Liang ◽  
Cheng-Tang Lin ◽  
Mao-Chieh Chen
Keyword(s):  
Thermal Annealing ◽  
Gate Oxide ◽  
Annealing Effect ◽  
Post Implantation

The Effects of Annealing Temperature on the Characteristics of Buried Oxide Silicon-On-Insulator

1985 ◽  
Vol 53 ◽  
Author(s):  
B.-Y Mao ◽  
P.-H. Chang ◽  
H.W. Lam ◽  
B.W. Shen ◽  
J.A. Keenan
Keyword(s):  
Annealing Temperature ◽  
Silicon Film ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Thermal Donor ◽  
Buried Oxide ◽  
Lower Oxygen ◽  
Higher Temperature ◽  
Soi Substrates ◽  
Post Implantation

ABSTRACTThe effects of post implantation annealing on the properties of buried oxide silicon-on-insulator (SOI) substrates in the temperature range of 1150°C to 1300°C have been studied. Microstructural analyses showed that the crystallinity of the top silicon layer was improved at higher annealing temperature. Lower thermal donor generation at 450°C was observed in SOI annealed at higher temperature. The improvement in microstructure and lower thermal donor generation were correlated to the lower oxygen concentration in the top silicon film.

Donor Creation During Oxygen Implanted Buried Oxide Formation

1985 ◽  
Vol 53 ◽  
Author(s):  
M. Delfino ◽  
P.K. Chu
Keyword(s):  
Mass Spectrometry ◽  
Oxide Layer ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Electron Conductivity ◽  
Oxide Formation ◽  
Oxygen Ions ◽  
Buried Oxide ◽  
High Concentrations ◽  
Secondary Ion

ABSTRACTEnhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.

Mechanisms of Formation of Thin Buried Oxide Layers by Ion Implantation

1987 ◽  
Vol 93 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
L. N. Pfeiffer ◽  
K. W. West
Keyword(s):  
Substrate Temperature ◽  
Annealing Temperature ◽  
Oxide Formation ◽  
Thermally Activated ◽  
Buried Oxide ◽  
Annealing Conditions ◽  
Mechanisms Of Formation ◽  
Substrate Temperatures ◽  
Thermally Activated Process

ABSTRACTWe have studied buried oxide formation as a function of implantation and annealing conditions. The layers appear to form via a nucleation and growth process, so the quality of the oxide and the perfection of the overlying crystalline Si layer depend more strongly on the substrate temperature during implantation than on the annealing temperature. Since it is easier to observe the layer formation process in a thin (<1000Å) layer, we concentrated on sub-stoichiometric doses and chose substrate temperatures below 400°C to stay in a homogeneous nucleation regime. Then we varied the annealing temperature from 1150°C to 1407°C. Modeling the coalescence of the oxide layer as a thermally-activated process yields activation energies of approximately 6 eV, suggesting that crystalline damage removal may be the bottleneck for this substrate temperature regime.

Mechanisms of buried oxide formation by ion implantation

1987 ◽  
Vol 50 (1) ◽  
pp. 19-21 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
J. L. Batstone ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Oxide Formation ◽  
Buried Oxide

Competitive Oxidation During Buried Oxide Formation Using Separation by Plasma Implantation of Oxygen (Spimox)

1995 ◽  
Vol 388 ◽  
Author(s):  
Jingbao Liu ◽  
S. Sundar Kumar Iyer ◽  
Jing Min ◽  
Paul Chu ◽  
Ron Gronsky ◽  
...  
Keyword(s):  
Oxygen Plasma ◽  
Surface Oxidation ◽  
Silicon On Insulator ◽  
Implantation Technique ◽  
Buried Oxide ◽  
Gaussian Profile ◽  
Different Depths ◽  
Non Gaussian ◽  
Post Implantation ◽  
Si Wafer

AbstractWe have recently demonstrated a new implantation technique called SPIMOX (separation by plasma implantation of oxygen) to synthesize silicon-on-insulator structures using plasma immersion ion implantation (PIII) process. the implantation is performed by applying a large negative bias to a Si wafer immersed in an oxygen plasma created by an ECR source. Since the technique has no mass analysis, coexistence of O+ and O2+ ions in oxygen plasma can cause a non-Gaussian profile of the as-implanted oxygen distribution. We observed that during post-implantation annealing, the ripening process of the oxide precipitates depends on depth and concentration of the oxygen peaks. IN addition, implanted oxygen can migrate towards the Si surface during annealing, preventing a continuous buried oxide layer formation. IN this paper, we report our observation on the effect of the implantation profile on the competitions between internal oxidation at different depths and between internal and surface oxidation processes. With an additional He implantation, we demonstrate that the nucleation of oxide precipitation can be enhanced.

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