Performance of Direct Tunneling Floating Gate Memory with Medium-κ Dielectrics for Embedded-Random-Access Memory Applications

2006 ◽  
Vol 45 (4B) ◽  
pp. 3170-3175
Author(s):  
Bogdan Govoreanu ◽  
Robin Degraeve ◽  
Thomas Kauerauf ◽  
Wim Magnus ◽  
Dirk Wellekens ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Floating Gate ◽  
Access Memory ◽  
Direct Tunneling ◽  
Floating Gate Memory ◽  
Memory Applications

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Insertion of a Si layer to reduce operation current for resistive random access memory applications

2013 ◽  
Vol 102 (25) ◽  
pp. 252902 ◽  
Author(s):  
Yu-Ting Chen ◽  
Ting-Chang Chang ◽  
Han-Kuang Peng ◽  
Hsueh-Chih Tseng ◽  
Jheng-Jie Huang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Fabrication and Electrical Characterization ofPt/(Ba,Sr)TiO3/PtCapacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1548-1552 ◽  
Author(s):  
Soon Oh Park ◽  
Cheol Seong Hwang ◽  
Hag-Ju Cho ◽  
Chang Suk Kang ◽  
Ho-Kyu Kang ◽  
...  
Keyword(s):  
Random Access ◽  
Electrical Characterization ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Memory Applications
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