Performance of Direct Tunneling Floating Gate Memory with Medium-κ Dielectrics for Embedded-Random-Access Memory Applications

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

Electrochemical and Solid-State Letters ◽

10.1149/1.3264734 ◽

2010 ◽

Vol 13 (2) ◽

pp. K8 ◽

Cited By ~ 19

Author(s):

Dongbok Lee ◽

Sung-Soo Yim ◽

Ho-Ki Lyeo ◽

Min-Ho Kwon ◽

Dongmin Kang ◽

...

Keyword(s):

Phase Change ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Solid-State Electronics ◽

10.1016/j.sse.2009.01.015 ◽

2009 ◽

Vol 53 (3) ◽

pp. 389-391 ◽

Cited By ~ 4

Author(s):

Seong-Wan Ryu ◽

Jin-Woo Han ◽

Chung-Jin Kim ◽

Sungho Kim ◽

Yang-Kyu Choi

Keyword(s):

Nonvolatile Memory ◽

Random Access ◽

Random Access Memory ◽

Floating Gate ◽

Floating Body ◽

Access Memory

A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.790 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 790-793 ◽

Cited By ~ 18

Author(s):

Toshihiko Mori ◽

Shunichi Muto ◽

Hirotaka Tamura ◽

Naoki Yokoyama

Keyword(s):

Resonant Tunneling ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Static Random Access Memory ◽

Hot Electron ◽

Access Memory ◽

Memory Applications ◽

Hot Electron Transistor

Mechanically Operated Random Access Memory (MORAM) Based on an Electrostatic Microswitch for Nonvolatile Memory Applications

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.2003052 ◽

2008 ◽

Vol 55 (10) ◽

pp. 2785-2789 ◽

Cited By ~ 20

Author(s):

Weon Wi Jang ◽

Jeong Oen Lee ◽

Hyun-Ho Yang ◽

Jun-Bo Yoon

Keyword(s):

Nonvolatile Memory ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

2009 International Conference on Advances in Computing, Control, and Telecommunication Technologies ◽

Resistive Switching of Al/Sol-Gel ZnO/Al Devices for Resistive Random Access Memory Applications

10.1109/act.2009.122 ◽

2009 ◽

Cited By ~ 1

Author(s):

Saniya Deshpande ◽

Vineet Vijayakrishnan Nair

Keyword(s):

Resistive Switching ◽

Sol Gel ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1953687 ◽

2005 ◽

Vol 23 (5) ◽

pp. 1309-1313 ◽

Cited By ~ 99

Author(s):

Jae-Wan Park ◽

Jong-Wan Park ◽

Dal-Young Kim ◽

Jeon-Kook Lee

Keyword(s):

Nickel Oxide ◽

Resistive Switching ◽

Oxide Films ◽

Random Access ◽

Random Access Memory ◽

Reactive Sputtering ◽

Access Memory ◽

Memory Applications ◽

Nickel Oxide Films

Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/48/26/265203 ◽

2015 ◽

Vol 48 (26) ◽

pp. 265203 ◽

Cited By ~ 9

Author(s):

M Aoukar ◽

P D Szkutnik ◽

D Jourde ◽

B Pelissier ◽

P Michallon ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Phase Change ◽

Carbon Content ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Access Memory ◽

Insertion of a Si layer to reduce operation current for resistive random access memory applications

Applied Physics Letters ◽

10.1063/1.4812304 ◽

2013 ◽

Vol 102 (25) ◽

pp. 252902 ◽

Cited By ~ 12

Author(s):

Yu-Ting Chen ◽

Ting-Chang Chang ◽

Han-Kuang Peng ◽

Hsueh-Chih Tseng ◽

Jheng-Jie Huang ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Bipolar Resistive Switching Characteristics of TiN/HfO x /ITO Devices for Resistive Random Access Memory Applications

Chinese Physics Letters ◽

10.1088/0256-307x/30/10/107302 ◽

2013 ◽

Vol 30 (10) ◽

pp. 107302 ◽

Cited By ~ 5

Author(s):

Ting-Ting Tan ◽

Xi Chen ◽

Ting-Ting Guo ◽

Zheng-Tang Liu

Keyword(s):

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Bipolar Resistive Switching ◽

Switching Characteristics ◽

Fabrication and Electrical Characterization ofPt/(Ba,Sr)TiO3/PtCapacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.1548 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 1548-1552 ◽

Cited By ~ 58

Author(s):

Soon Oh Park ◽

Cheol Seong Hwang ◽

Hag-Ju Cho ◽

Chang Suk Kang ◽

Ho-Kyu Kang ◽

...

Keyword(s):

Random Access ◽

Electrical Characterization ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽