Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

2015 ◽  
Vol 48 (26) ◽  
pp. 265203 ◽  
Author(s):  
M Aoukar ◽  
P D Szkutnik ◽  
D Jourde ◽  
B Pelissier ◽  
P Michallon ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Phase Change ◽  
Carbon Content ◽  
Vapor Deposition ◽  
Random Access ◽  
Chemical Vapor ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO3 Thin Films for High Density Dynamic Random Access Memory Capacitors

1999 ◽  
Vol 38 (Part 2, No. 2B) ◽  
pp. L195-L198 ◽  
Author(s):  
Jae-Hyun Joo ◽  
Jong-Bum Park ◽  
Younsoo Kim ◽  
Kong-Soo Lee ◽  
Jun-Sik Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Random Access ◽  
Chemical Vapor ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Density Dynamic
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