New Analytical Model for Short-Channel Fully Depleted Dual-Material Gate Silicon-on-Insulator Metal Semiconductor Field-Effect Transistor

Te-Kuang Chiang

doi:10.1143/jjap.47.8743

New Analytical Model for Short-Channel Fully Depleted Dual-Material Gate Silicon-on-Insulator Metal Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8743 ◽

2008 ◽

Vol 47 (12) ◽

pp. 8743-8748 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Short Channel ◽

Fully Depleted ◽

Effect Transistor ◽

Dual Material

New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Material

Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.104501 ◽

2009 ◽

Vol 48 (10) ◽

pp. 104501 ◽

Cited By ~ 2

Author(s):

Mohammad Kazem Anvarifard ◽

Seyed Ebrahim Hosseini ◽

Mahdi Gordi Armaki

Keyword(s):

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Gate ◽

Effect Transistor

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fd19 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD19 ◽

Cited By ~ 1

Author(s):

Keiichi Maekawa ◽

Hideki Makiyama ◽

Yoshiki Yamamoto ◽

Takumi Hasegawa ◽

Shinobu Okanishi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Comprehensive Analysis ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Fully Depleted ◽

Effect Transistor

A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8297 ◽

2008 ◽

Vol 47 (11) ◽

pp. 8297-8304 ◽

Cited By ~ 8

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Behavior Model ◽

Effect Transistor ◽

Dual Material

On the high-field transport and its temperature dependence in deca-nanometer fully depleted silicon-on-insulator field-effect-transistor

Applied Physics Letters ◽

10.1063/1.3626849 ◽

2011 ◽

Vol 99 (9) ◽

pp. 092104

Author(s):

Masaharu Kobayashi ◽

Jin Cai ◽

Wilfried Haensch

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Fully Depleted ◽

Effect Transistor

Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model

Journal of Applied Physics ◽

10.1063/1.4770475 ◽

2012 ◽

Vol 112 (12) ◽

pp. 124517 ◽

Cited By ~ 3

Author(s):

V. Dobrovolsky ◽

F. Sizov

Keyword(s):

Analytical Model ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Subthreshold Swing ◽

Effect Transistor ◽

Threshold Gate

PH3Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.6943 ◽

2004 ◽

Vol 43 (10) ◽

pp. 6943-6947 ◽

Cited By ~ 2

Author(s):

Ki-Soo Kim ◽

Moon-Seok Yang ◽

Joo-Kyung Song ◽

Sang-Hyun Hong ◽

Ohyun Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Rapid Thermal Anneal ◽

Fully Depleted ◽

Effect Transistor

A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1015 ◽

1997 ◽

Vol 36 (Part 1, No. 3A) ◽

pp. 1015-1024 ◽

Cited By ~ 2

Author(s):

Sheng-Lyang Jang ◽

Man-Chun Hu ◽

Shau-Shen Liu ◽

Young-Shying Chen

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Velocity Overshoot ◽

Fully Depleted ◽

Deep Submicrometer ◽

Transistor Model ◽

Effect Transistor

Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2166 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2166-2169 ◽

Cited By ~ 9

Author(s):

Daisuke Kitamaru ◽

Yasuhito Uetsuji ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Circuit Simulation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Transistor Model ◽

Effect Transistor

Circular Pseudo-Metal Oxide Semiconductor Field Effect Transistor in Silicon-on-Insulator Analytical Model, Simulation, and Measurements

Electrochemical and Solid-State Letters ◽

10.1149/1.1390798 ◽

1999 ◽

Vol 2 (5) ◽

pp. 242 ◽

Cited By ~ 17

Author(s):

D. Munteanu

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Model Simulation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor