Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors

2010 ◽  
Vol 49 (2) ◽  
pp. 024204
Author(s):  
Masato Noborio ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Fixed Charges ◽  
Channel Effects

Boron redistribution in arsenic‐implanted silicon and short‐channel effects in metal–oxide–semiconductor field effect transistors

1992 ◽  
Vol 61 (25) ◽  
pp. 3038-3040 ◽  
Author(s):  
D. K. Sadana ◽  
A. Acovic ◽  
B. Davari ◽  
D. Grutzmacher ◽  
H. Hanafi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

2004 ◽  
Vol 43 (4B) ◽  
pp. 2151-2155 ◽  
Author(s):  
Yongxun Liu ◽  
Kenichi Ishii ◽  
Meishoku Masahara ◽  
Toshiyuki Tsutsumi ◽  
Hidenori Takashima ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Cross Sectional ◽  
Shape Dependence ◽  
Channel Effects

Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function

2020 ◽  
Vol 18 (6) ◽  
pp. 468-476
Author(s):  
Prateek Kumar ◽  
Maneesha Gupta ◽  
Naveen Kumar ◽  
Marlon D. Cruz ◽  
Hemant Singh ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molybdenum Disulphide ◽  
Short Channel ◽  
Tungsten Disulphide ◽  
Channel Effects ◽  
Effect Transistor

With technology invading nanometer regime performance of the Metal-Oxide-semiconductor Field Effect Transistor is largely hampered by short channel effects. Most of the simulation tools available do not include short channel effects and quantum effects in the analysis which raises doubt on their authenticity. Although researchers have tried to provide an alternative in the form of tunnel field-effect transistors, junction-less transistors, etc. but they all suffer from their own set of problems. Therefore, Metal-Oxide-Semiconductor Field-Effect Transistor remains the backbone of the VLSI industry. This work is dedicated to the design and study of the novel tub-type Metal-Oxide-Semiconductor Field-Effect Transistor. For simulation Non-Equilibrium Green’s Function is used as the primary model of simulation. The device is analyzed under different physical variations like work function, permittivity, and interface trap charge. This work uses Silicon-Molybdenum Disulphide heterojunction and Silicon-Tungsten Disulphide heterojunction as channel material. Results for both the heterojunctions are compared. It was analyzed that Silicon-Molybdenum Disulphide heterojunction provides better linearity and Silicon-Tungsten Disulphide heterojunction provides better switching speed than conventional Metal-Oxide-Semiconductor Field-Effect Transistor.

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