Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

2004 ◽  
Vol 43 (4B) ◽  
pp. 2151-2155 ◽  
Author(s):  
Yongxun Liu ◽  
Kenichi Ishii ◽  
Meishoku Masahara ◽  
Toshiyuki Tsutsumi ◽  
Hidenori Takashima ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Cross Sectional ◽  
Shape Dependence ◽  
Channel Effects

Boron redistribution in arsenic‐implanted silicon and short‐channel effects in metal–oxide–semiconductor field effect transistors

1992 ◽  
Vol 61 (25) ◽  
pp. 3038-3040 ◽  
Author(s):  
D. K. Sadana ◽  
A. Acovic ◽  
B. Davari ◽  
D. Grutzmacher ◽  
H. Hanafi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

A New Approach to the Characteristics and Short-Channel Effects of Double-Gate Carbon Nanotube Field-Effect Transistors using MATLAB: A Numerical Study

2012 ◽  
Vol 67 (6-7) ◽  
pp. 317-326 ◽  
Author(s):  
Alireza Heidari ◽  
Niloofar Heidari ◽  
Foad Khademi Jahromi ◽  
Roozbeh Amiri ◽  
Mohammadali Ghorbani
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Open Boundary ◽  
Double Gate ◽  
Short Channel Effects ◽  
Drain Voltage ◽  
Short Channel ◽  
Channel Effects ◽  
The Impact

In this paper, first, the impact of different gate arrangements on the short-channel effects of carbon nanotube field-effect transistors with doped source and drain with the self-consistent solution of the three-dimensional Poisson equation and the Schr¨odinger equation with open boundary conditions, within the non-equilibrium Green function, is investigated. The results indicate that the double-gate structure possesses a quasi-ideal subthreshold oscillation and an acceptable decrease in the drain induced barrier even for a relatively thick gate oxide (5 nm). Afterward, the electrical characteristics of the double-gate carbon nanotube field-effect transistors (DG-CNTFET) are investigated. The results demonstrate that an increase in diameter and density of the nanotubes in the DG-CNTFET increases the on-state current. Also, as the drain voltage increases, the off-state current of the DG-CNTFET decreases. In addition, regarding the negative gate voltages, for a high drain voltage, increasing in the drain current due to band-to-band tunnelling requires a larger negative gate voltage, and for a low drain voltage, resonant states appear

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