Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects

2013 ◽  
Vol 114 (22) ◽  
pp. 224507 ◽  
Author(s):  
Billel Smaani ◽  
Saida Latreche ◽  
Benjamín Iñiguez
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Surrounding Gate ◽  
Channel Effects

50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors – Characterization and Inspection of Operation.

2011 ◽  
Vol 1282 ◽  
Author(s):  
David A. J. Moran ◽  
Donald A. MacLaren ◽  
Samuele Porro ◽  
Richard Hill ◽  
Helen McLelland ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Transmission Electron ◽  
Channel Effects ◽  
Physical And Chemical ◽  
Electron Energy Loss

ABSTRACTHydrogen terminated diamond field effect transistors (FET) of 50nm gate length have been fabricated, their DC operation characterised and their physical and chemical structure inspected by Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS). DC characterisation of devices demonstrated pinch-off of the source-drain current can be maintained by the 50nm gate under low bias conditions. At larger bias, off-state output conductance increases, demonstrating most likely the onset of short-channel effects at this reduced gate length.

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