Anisotropic Transformation of 4H-SiC Etching Shapes by High-Temperature Annealing and Its Enhancement by Ion Implantation

2010 ◽  
Vol 49 (4) ◽  
pp. 040203 ◽  
Author(s):  
Yasuyuki Kawada ◽  
Takeshi Tawara ◽  
Shun-ichi Nakamura ◽  
Takashi Tsuji ◽  
Masahide Gotoh ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
High Temperature Annealing

Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing

1990 ◽  
Vol 205 ◽  
Author(s):  
L. De Wit ◽  
S. Roorda ◽  
W.C. Sinke ◽  
F.W. Saris ◽  
A.J.M. Berntsen ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
High Temperature Annealing ◽  
Temperature Range ◽  
Amorphous Si ◽  
Anneal Temperature

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.

Trench Formation on Ion Implanted SiC Surfaces after Thermal Oxidation

2005 ◽  
Vol 483-485 ◽  
pp. 777-780 ◽  
Author(s):  
Wook Bahng ◽  
Geun Ho Song ◽  
Nam Kyun Kim ◽  
Sang Cheol Kim ◽  
Hyoung Wook Kim ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Ion Implantation ◽  
Doping Concentration ◽  
Side Wall ◽  
Surface Region ◽  
Surface Roughening ◽  
Oxide Growth ◽  
High Temperature Annealing ◽  
Thermal Oxide

The effects of the damage induced during ion implantation on the surface roughening and oxide growth rate were investigated. Using several scheme of doses and acceleration energies, it is found that the amount of the dose predominantly produce damage rather than the acceleration energy, especially near the surface region. It was also found that the damage affects not only the oxide growth rate but also the surface roughening during high temperature annealing. The edge of highly implanted area may have higher doping concentration due to the vicinal side wall effect of the thick oxide mask for ion implantation. It was confirmed by the trench formation after thermal oxide remove.

scholarly journals Diffusion of Dopants and Components in Arsenic-Implanted CdTe/HgCdTe Structures under Different High-Temperature Annealing Conditions

Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 41
Author(s):  
Shi ◽  
Lin ◽  
Wei
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Magnetron Sputtering ◽  
Significant Influence ◽  
Thermal Evaporation ◽  
Layer Structure ◽  
High Temperature Annealing ◽  
Annealing Conditions ◽  
Cap Layer ◽  
Diffusion Behaviors

The CdTe cap layers were grown on CdZnTe-substrated HgCdTe (MCT) LPE epilayers by magnetron sputtering and thermal evaporation. The diffusion behaviors of Cd & Hg components and impurities (As or In) in these CdTe/MCT structures subjected to As ion implantation and various Hg overpressure annealing processes were investigated. The conclusions indicate that the defects at the CdTe/MCT interface could produce the accumulations of impurities and the distributions of induced damages (related to the cap layer structure) have a significant influence on the diffusion of components and impurities. By adjusting annealing procedures, the diffusions of components and impurities can be controlled.

Interfacial Structure and Evolution in Mesotaxial CoSi2/Si Heterostructure

1991 ◽  
Vol 238 ◽  
Author(s):  
S. R. Hull ◽  
Y. F. Hsieh ◽  
A. E. White ◽  
K. T. Short
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Interfacial Structure ◽  
High Temperature Annealing ◽  
Ripening Process ◽  
Si Substrates ◽  
Buried Layers ◽  
Precipitate Nucleation ◽  
And Control ◽  
First Time

ABSTRACTWe describe the evolution and microstructure of Si/CoSi2/Si (100) and (111) heterostructures formed by Co+ ion implantation into Si substrates (“mesotaxy”), followed by high temperature annealing. It is shown that the CoSi2 precipitate nucleation and ripening process, and eventual coalescence into buried layers, is controlled by interfacial structure and energetics. Understanding and control of these processes allows for the first time synthesis of otherwise almost identical CoSi2 buried layers with either twinned or untwinned CoSi2/Si(111) interfaces.

Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing

2017 ◽  
Vol 254 (9) ◽  
pp. 1700040 ◽  
Author(s):  
Masafumi Inaba ◽  
Akinori Seki ◽  
Kazuaki Sato ◽  
Tomoyoshi Kushida ◽  
Taisuke Kageura ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
High Dose ◽  
High Temperature Annealing ◽  
Vertical Edge ◽  
Graphite Layer

Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon

2019 ◽  
Vol 963 ◽  
pp. 153-156 ◽  
Author(s):  
Marcin Zielinski ◽  
Sylvain Monnoye ◽  
Hugues Mank ◽  
Frank Torregrosa ◽  
Gregory Grosset ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
High Temperature Annealing ◽  
Si Substrate ◽  
Plasma Immersion Ion Implantation ◽  
Carbon Treatment

In this contribution we investigate the possibility to obtain an oriented 3C-SiC seed on Si substrate “pre-carbonized” through Plasma Immersion Ion Implantation (PIII) process by combining PIII with high temperature annealing.

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