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Comparative Study of Plasma-Charging Damage in High-$k$ Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.50.08kd05
◽
2011
◽
Vol 50
(8)
◽
pp. 08KD05
◽
Cited By ~ 1
Author(s):
Masayuki Kamei
◽
Yoshinori Takao
◽
Koji Eriguchi
◽
Kouichi Ono
Keyword(s):
Metal Oxide
◽
Comparative Study
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
High K
◽
High K Dielectric
Download Full-text
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References
Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
2009 International Symposium on VLSI Technology, Systems, and Applications
◽
10.1109/vtsa.2009.5159330
◽
2009
◽
Author(s):
Hock-Chun Chin
◽
Xinke Liu
◽
Leng-Seow Tan
◽
Yee-Chia Yeo
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
High K
◽
Cmos Compatible
◽
High K Dielectric
Download Full-text
Comparative Study of Plasma-Charging Damage in High-kDielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.7567/jjap.50.08kd05
◽
2011
◽
Vol 50
(8S2)
◽
pp. 08KD05
◽
Cited By ~ 1
Author(s):
Masayuki Kamei
◽
Yoshinori Takao
◽
Koji Eriguchi
◽
Kouichi Ono
Keyword(s):
Metal Oxide
◽
Comparative Study
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
Download Full-text
Effects of gate edge profile on off-state leakage suppresion in metal gate/high-k dielectric n-type metal-oxide-semiconductor field effect transistors
Applied Physics Letters
◽
10.1063/1.2734381
◽
2007
◽
Vol 90
(18)
◽
pp. 183501
◽
Cited By ~ 3
Author(s):
Chang Yong Kang
◽
Rino Choi
◽
S. C. Song
◽
B. H. Lee
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
High K
◽
Edge Profile
◽
High K Dielectric
◽
Gate Edge
Download Full-text
Effects of Optimization of Gate Edge Profile on sub-45nm Metal Gate High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors Characteristics
10.7567/ssdm.2006.j-8-3
◽
2006
◽
Author(s):
C. Y. Kang
◽
R. Choi
◽
S. H. Bae
◽
S. C. Song
◽
M. M. Hussain
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
High K
◽
Edge Profile
◽
High K Dielectric
◽
Gate Edge
Download Full-text
Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.3678023
◽
2012
◽
Vol 100
(3)
◽
pp. 033501
◽
Cited By ~ 5
Author(s):
Ju-Wan Lee
◽
Jong-Ho Lee
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Random Telegraph Noise
◽
High K
◽
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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks
Japanese Journal of Applied Physics
◽
10.1143/jjap.51.02bc10
◽
2012
◽
Vol 51
(2)
◽
pp. 02BC10
Author(s):
Dongwoo Kim
◽
Seonhaeng Lee
◽
Cheolgyu Kim
◽
Taekyung Oh
◽
Bongkoo Kang
Keyword(s):
Metal Oxide
◽
Layer Thickness
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
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Gate Stacks
◽
Metal Gate
◽
Hot Carrier
◽
High K
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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
Applied Physics Letters
◽
10.1063/1.2189456
◽
2006
◽
Vol 88
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◽
pp. 132107
◽
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Author(s):
A. Ritenour
◽
A. Khakifirooz
◽
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◽
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Keyword(s):
Metal Oxide
◽
Field Effect
◽
Molecular Beam
◽
Field Effect Transistors
◽
Oxide Thickness
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Equivalent Oxide Thickness
◽
Metal Gate
◽
High K
Download Full-text
The design and performance of hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors with high k oxide HfO2
Micro and Nano Engineering
◽
10.1016/j.mne.2020.100046
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2020
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Vol 6
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pp. 100046
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Cited By ~ 2
Author(s):
Chi Sun
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Tingting Hao
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Junjie Li
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Haitao Ye
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Field Effect
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Field Effect Transistors
◽
Metal Oxide Semiconductor
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Oxide Semiconductor
◽
High K
◽
And Performance
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The low leakage current in floating body GaN metal oxide semiconductor field effect transistors
Solid-State Electronics
◽
10.1016/j.sse.2010.07.005
◽
2010
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Vol 54
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◽
pp. 1561-1565
Author(s):
Tatsuya Fujishima
◽
Hirotaka Otake
◽
Yasushi Nanishi
◽
Hiroaki Ohta
Keyword(s):
Metal Oxide
◽
Leakage Current
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Floating Body
◽
Low Leakage
◽
Low Leakage Current
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Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
◽
10.1116/1.3521479
◽
2011
◽
Vol 29
(1)
◽
pp. 01AA05
◽
Cited By ~ 1
Author(s):
G. Roll
◽
S. Jakschik
◽
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...
Keyword(s):
Metal Oxide
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Leakage Current
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Field Effect
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Field Effect Transistor
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Interface Defects
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High K
◽
Effect Transistor
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