Post Deposition Annealing Temperature Effect on White-Light Emitting of WOx Thin Film Stack on Si

2014 ◽  
Vol 61 (35) ◽  
pp. 1-6
Author(s):  
C.-C. Lin ◽  
Y. Kuo
Keyword(s):  
Thin Film ◽  
Temperature Effect ◽  
White Light ◽  
Annealing Temperature ◽  
Post Deposition Annealing ◽  
Light Emitting ◽  
Post Deposition

Post Deposition Annealing Temperature Effect on White-light Emitting of Sputter Deposited Zr-doped HfO2 Thin Film

2014 ◽  
Vol 1698 ◽  
Author(s):  
Chi-Chou Lin ◽  
Yue Kuo
Keyword(s):  
Thin Film ◽  
White Light ◽  
Annealing Temperature ◽  
Light Emission ◽  
Broad Band ◽  
Post Deposition Annealing ◽  
Strong Light ◽  
Wide Range ◽  
Post Deposition ◽  
Stress Voltage

ABSTRACTThe warm white light emission from the MOS capacitor containing the Zr-doped HfO2 high-k thin film on a p-type Si wafer under various post deposition annealing temperatures has been investigated. The light intensity is affected by the annealing temperature and the magnitude of the stress voltage. The annealing temperature changes the defect density and the physical thickness of the high-k stack. The high stress voltage induces the strong light emission because of the passage of a large current through the conductive path. The broad band emission spectrum covers the visible and near IR wavelength range with a large color rendering index. This new light emission device has a very long lifetime of > 1,000 hours at the atmosphere without a protection layer. The device is made of the IC compatible material and fabrication process, which favors the application over a wide range of products.

scholarly journals Influence of Post-deposition Annealing Temperature on the Properties of GZO/Al Thin Film

2014 ◽  
Vol 47 (2) ◽  
pp. 81-85 ◽  
Author(s):  
Sun-Kyung Kim ◽  
Seung-Hong Kim ◽  
So-Young Kim ◽  
Jae-Hyun Jeon ◽  
Tae-Kyung Gong ◽  
...  
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Post Deposition Annealing ◽  
Al Thin Film ◽  
Post Deposition

Effects of electron-withdrawing groups in imidazole-phenanthroline ligands and their influence on the photophysical properties of EuIII complexes for white light-emitting diodes

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan
Keyword(s):  
Thin Film ◽  
Quantum Yield ◽  
White Light ◽  
Light Emitting Diode ◽  
Photophysical Properties ◽  
Red Light ◽  
Europium Complexes ◽  
Light Emitting ◽  
White Light Emitting Diodes ◽  
Phenanthroline Ligands

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).

Effect of deposition pressure and post deposition annealing on SmCo thin film properties

2008 ◽  
Vol 5 (12) ◽  
pp. 3759-3762 ◽  
Author(s):  
Th. Speliotis ◽  
E. Makarona ◽  
F. Chouliaras ◽  
C. A. Charitidis ◽  
C. Tsamis ◽  
...  
Keyword(s):  
Thin Film ◽  
Deposition Pressure ◽  
Post Deposition Annealing ◽  
Film Properties ◽  
Post Deposition
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