Relationship between Basal Plane Dislocation and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

2019 ◽  
Vol 92 (7) ◽  
pp. 123-130
Author(s):  
Tuerxun Ailihumaer ◽  
Balaji Raghothamachar ◽  
Michael Dudley
2020 ◽  
Vol 49 (6) ◽  
pp. 3455-3464
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Gilyong Chung ◽  
...  

Author(s):  
Y. Feng ◽  
X. Y. Cai ◽  
R. J. Kelley ◽  
D. C. Larbalestier

The issue of strong flux pinning is crucial to the further development of high critical current density Bi-Sr-Ca-Cu-O (BSCCO) superconductors in conductor-like applications, yet the pinning mechanisms are still much debated. Anomalous peaks in the M-H (magnetization vs. magnetic field) loops are commonly observed in Bi2Sr2CaCu2Oy (Bi-2212) single crystals. Oxygen vacancies may be effective flux pinning centers in BSCCO, as has been found in YBCO. However, it has also been proposed that basal-plane dislocation networks also act as effective pinning centers. Yang et al. proposed that the characteristic scale of the basal-plane dislocation networksmay strongly depend on oxygen content and the anomalous peak in the M-H loop at ˜20-30K may be due tothe flux pinning of decoupled two-dimensional pancake vortices by the dislocation networks. In light of this, we have performed an insitu observation on the dislocation networks precisely at the same region before and after annealing in air, vacuumand oxygen, in order to verify whether the dislocation networks change with varying oxygen content Inall cases, we have not found any noticeable changes in dislocation structure, regardless of the drastic changes in Tc and the anomalous magnetization. Therefore, it does not appear that the anomalous peak in the M-H loops is controlled by the basal-plane dislocation networks.


2020 ◽  
Vol 1004 ◽  
pp. 393-400
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Gilyong Chung ◽  
...  

Synchrotron monochromatic beam X-ray topography (SMBXT) in grazing incidence geometry shows black and white contrast for basal plane dislocations (BPDs) with Burgers vectors of opposite signs as demonstrated using ray tracing simulations. The inhomogeneous distribution of these dislocations is associated with the concave/convex shape of the basal plane. Therefore, the distribution of these two BPD types were examined for several 6-inch diameter 4H-SiC substrates and the net BPD density distribution was used for evaluating the nature and magnitude of basal plane bending in these wafers. Results show different bending behaviors along the two radial directions - [110] and [100] directions, indicating the existence of non-isotropic bending. Linear mapping of the peak shift of the 0008 reflection along the two directions was carried out using HRXRD to correlate with the results from the SMBXT measurements. Basal-plane-tilt angle calculated using the net BPD density derived from SMBXT shows a good correlation with those obtained from HRXRD measurements, which further confirmed that bending in basal plane is caused by the non-uniform distribution of BPDs. Regions of severe bending were found to be associated with both large tilt angles (95% black contrast BPDs to 5% white contrast BPDs) and abrupt changes in a and c lattice parameters i.e. local strain.


2006 ◽  
Vol 911 ◽  
Author(s):  
Joseph John Sumakeris ◽  
Brett A. Hull ◽  
Michael J. O'Loughlin ◽  
S. Ha ◽  
Marek Skowronski ◽  
...  

AbstractWe describe surface preparation and epilayer growth techniques that readily reduce the density of Vf drift inducing basal plane dislocations in epilayers to less than 10 cm-2 and permit the fabrication of bipolar SiC devices with very good Vf stability. The optimal process route requires etching the substrate surface prior to epilayer growth to enhance the natural conversion of basal plane dislocations into threading edge dislocations during epilayer growth. The surface of this relatively rough “conversion” epilayer is subsequently repolished prior to growing the device structure. We provide details on processing parameters and potential problems as well as describe devices produced using this low basal plane dislocation growth processes.


2018 ◽  
Vol 924 ◽  
pp. 147-150
Author(s):  
Jörg Pezoldt ◽  
Andrei Alexandrovich Kalnin

A model based on the generation and recombination of defect was developed to describe the stability of stacking faults and basal plane dislocation loops in crystals with layered polytype structures. The stability of the defects configuration was analysed for stacking faults surrounded by Shockley and Frank partial dislocation as well as Shockley dislocation dipoles with long range elastic fields. This approach allows the qualitative prediction of defect subsystems in polytype structure in external fields.


CrystEngComm ◽  
2017 ◽  
Vol 19 (27) ◽  
pp. 3844-3849 ◽  
Author(s):  
Yingxin Cui ◽  
Xiaobo Hu ◽  
Xuejian Xie ◽  
Rongkun Wang ◽  
Xiangang Xu

Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution X-ray diffractometry (HRXRD).


2018 ◽  
Vol 57 (4S) ◽  
pp. 04FR07 ◽  
Author(s):  
Shohei Hayashi ◽  
Tamotsu Yamashita ◽  
Junji Senzaki ◽  
Masaki Miyazato ◽  
Mina Ryo ◽  
...  

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