Barrier Characteristics of Chemical Vapor Deposited Amorphous‐like Tungsten Silicide with In Situ Nitrogen Plasma Treatment

1999 ◽  
Vol 146 (7) ◽  
pp. 2533-2539
Author(s):  
Kow‐Ming Chang ◽  
I‐Chung Deng ◽  
Ta‐Hsun Yeh ◽  
Chien‐Wen Shih
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Tungsten Silicide ◽  
Chemical Vapor Deposited

Effective Improvement on Barrier Capability of Chemical Vapor Deposited WSi x Using  N 2 Plasma Treatment

1999 ◽  
Vol 146 (4) ◽  
pp. 1583-1592 ◽  
Author(s):  
M. T. Wang ◽  
Y. C. Lin ◽  
J. Y. Lee ◽  
C. C. Wang ◽  
M. C. Chen
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Suppression of Fluorine Penetration by Use of In Situ Stacked Chemical Vapor Deposited Tungsten Film

1999 ◽  
Vol 146 (8) ◽  
pp. 3092-3096 ◽  
Author(s):  
Kow‐Ming Chang ◽  
I‐Chung Deng ◽  
Hong‐Yi Lin
Keyword(s):  
Chemical Vapor ◽  
Tungsten Film ◽  
Chemical Vapor Deposited

Characteristics of Large-Area Plasma Enhanced Chemical Vapor Deposited TEOS Oxide with Various Short-Time Plasma Treatments

2001 ◽  
Vol 685 ◽  
Author(s):  
Ting-Kuo Chang ◽  
Ching-Wei Lin ◽  
Chang-Ho Tseng ◽  
Huang-Chung Cheng ◽  
Yuan-Ching Peng ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Electrical Strength ◽  
Large Area ◽  
Plasma Treatments ◽  
Chemical Vapor Deposited ◽  
Bias Temperature Stress ◽  
Short Time ◽  
Harmful Effects

AbstractIn this work, high quality silicon dioxide (SiO2) films were prepared by large-area plasmaenhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O2, N2O, and NH3 were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N2O, and NH3 plasma treatments, the electrical strength of oxide was enhanced. Besides, NH3 plasma treatment exhibited the highest enhancement efficiency. O2- plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Qbd) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH3-plasma, samples with N2O plasma treatment showed superior stress endurance. Consequently, N2O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.

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