Impact of Indium and Boron Interaction on Device Performance for Short and Narrow Channel n-Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1488918 ◽

2002 ◽

Vol 149 (8) ◽

pp. G485

Author(s):

S. Y. Ong ◽

E. F. Chor ◽

James Lee ◽

Alex See ◽

Lap Chan

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Narrow Channel ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance

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Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3350893 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102101 ◽

Author(s):

Han Zhao ◽

Yen-Ting Chen ◽

Jung Hwan Yum ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

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Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Thin Solid Films ◽

10.1016/j.tsf.2014.01.020 ◽

2014 ◽

Vol 557 ◽

pp. 311-315 ◽

Author(s):

Chang-Chun Lee ◽

Chuan-Hsi Liu ◽

Hung-Wen Hsu ◽

Min-Hui Hung

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Narrow Channel ◽

Metal Oxide Semiconductor ◽

Channel Width ◽

Oxide Semiconductor ◽

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Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3244578 ◽

2010 ◽

Vol 28 (1) ◽

pp. C1I12-C1I16 ◽

Author(s):

Ralf Illgen ◽

Stefan Flachowsky ◽

Tom Herrmann ◽

Wilfried Klix ◽

Roland Stenzel ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance

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Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.4225 ◽

1997 ◽

Vol 36 (Part 1, No. 7A) ◽

pp. 4225-4229

Author(s):

Jinho Ahn ◽

Dim-Lee Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Gate Oxides ◽

Chemical Vapor Deposited

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Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III–V Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.4.084301 ◽

2011 ◽

Vol 4 (8) ◽

pp. 084301 ◽

Author(s):

Yōsuke Maegawa ◽

Shunsuke Koba ◽

Hideaki Tsuchiya ◽

Matsuto Ogawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Parasitic Resistance

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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