Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides
1997 ◽
Vol 36
(Part 1, No. 7A)
◽
pp. 4225-4229
1999 ◽
Vol 38
(Part 2, No. 10A)
◽
pp. L1099-L1101
◽
1994 ◽
Vol 33
(Part 2, No. 7A)
◽
pp. L916-L917
◽
Keyword(s):
2003 ◽
Vol 42
(Part 1, No. 12)
◽
pp. 7256-7258
◽
2010 ◽
Vol 28
(1)
◽
pp. C1I12-C1I16
◽