Growth Rate Enhancement of Heavy n‐ and p‐Type Doped Silicon Deposited by Atmospheric‐Pressure Chemical Vapor Deposition at Low Temperatures

1993 ◽  
Vol 140 (9) ◽  
pp. 2703-2709 ◽  
Author(s):  
P. D. Agnello ◽  
T. O. Sedgwick ◽  
J. Cotte
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Rate Enhancement ◽  
Doped Silicon ◽  
Pressure Chemical ◽  
P Type

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical
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