Buried-Channel Field Effect Transistors of Triple SiGe Quantum Wells on SOI

2019 ◽  
Vol 3 (7) ◽  
pp. 973-979 ◽  
Author(s):  
Kiyohisa Fujinaga
Keyword(s):  
Quantum Wells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Buried Channel ◽  
Sige Quantum Wells

Novel Multiplexer Design Using Multi-State Spatial Wavefunction-Switched (SWS) FETs

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1520011 ◽  
Author(s):  
Pial Mirdha ◽  
Murali Lingalugari ◽  
Evan K. Heller ◽  
John A. Chandy ◽  
Faquir C. Jain
Keyword(s):  
Quantum Wells ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Logic Device ◽  
Coupled Quantum Wells ◽  
Conduction Mode

In this paper, we propose a multiplexer design based on use of a twin channel and twin drain spatial wavefunction-switched field-effect transistors (SWSFETs). SWSFET comprises of vertically stacked coupled quantum wells devices, which are the channels, where depending on the gate voltage only one of the channels is in conduction mode. Using SWSFET in multi-channel and single drain configuration operates as a multi-valued logic device. 2:1 and 4:2 multiplexer designs are proposed which are compatible with current CMOS technology and with all SWSFET. Both designs lead to greater than 4X reduction in transistor count. Ngspice simulation of circuits is also presented.

Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

2001 ◽  
Vol 87 (3) ◽  
pp. 277-281 ◽  
Author(s):  
M.J Rack ◽  
T.J Thornton ◽  
D.K Ferry ◽  
Jeff Roberts ◽  
Richard C Westhoff ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Strained Silicon

Temperature dependence of buried channel ion sensitive field effect transistors

2009 ◽  
Vol 106 (9) ◽  
pp. 094501 ◽  
Author(s):  
Roman Novitski ◽  
Hila Einati ◽  
Yosi Shacham-Diamand
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Buried Channel

scholarly journals Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and295K

2006 ◽  
Vol 74 (23) ◽  
Author(s):  
Yukinori Ono ◽  
Jean-Francois Morizur ◽  
Katsuhiko Nishiguchi ◽  
Kei Takashina ◽  
Hiroshi Yamaguchi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon On Insulator ◽  
Buried Channel ◽  
Impurity Conduction ◽  
Phosphorus Doped

Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

2008 ◽  
Vol 311 (1) ◽  
pp. 47-53 ◽  
Author(s):  
Brian R. Bennett ◽  
Mario G. Ancona ◽  
J. Brad Boos ◽  
Corwyn B. Canedy ◽  
Saara A. Khan
Keyword(s):  
Quantum Wells ◽  
Field Effect ◽  
Field Effect Transistors
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