Improving Electrical Characteristics of Ta∕Ta[sub 2]O[sub 5]∕Ta Capacitors Using Low-Temperature Inductively Coupled N[sub 2]O Plasma Annealing

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

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Plasma and electrical characteristics depending on an antenna position in an inductively coupled plasma with a passive resonant antenna

Plasma Sources Science and Technology ◽

10.1088/1361-6595/ac4146 ◽

2021 ◽

Author(s):

Ju Ho Kim ◽

Chin-Wook Chung

Keyword(s):

Inductively Coupled Plasma ◽

Metal Plate ◽

Electrical Characteristics ◽

Coupling Loss ◽

Rf Power ◽

Ion Density ◽

Electron Kinetics ◽

Inductively Coupled ◽

Cylindrical Reactor ◽

Antenna Position

Abstract We investigated the plasma and electrical characteristics depending on the antenna position in an inductively coupled plasma with a passive resonant antenna. When the powered antenna and passive resonant antenna are installed near the top plate and in the middle of the cylindrical reactor (Setup A), respectively, the ion density at the resonance is about 2.4 times to 9 times higher than that at non-resonance. This is explained by the reduction in power loss in the powered antenna (including the matching circuits) and the increase in power absorbed by the plasma discharge. However, when the powered antenna and passive resonant antenna are interchanged (Setup B), the ion density at the resonance is not significantly different from that at the non-resonance. When RF power is changed from 50 W to 200 W, the ion density at the resonance of Setup B is 1.6 times to 5.4 times higher than at the non-resonance of Setup A. To analyse this difference, the profile of the z-axis ion density is measured and the electric and magnetic field simulations are investigated. The results are discussed along with the electron kinetics effect and the coupling loss between the antenna and the metal plate.

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Structure and magnetic properties of Mn-doped Al foil and Bi flake by inductively coupled plasma ion doping at low temperature

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2020.166523 ◽

2020 ◽

Vol 502 ◽

pp. 166523

Author(s):

Xiongzuo Zhang ◽

Lei Li ◽

Jingzhi Han ◽

Yuxuan Peng ◽

Xin Li ◽

...

Keyword(s):

Magnetic Properties ◽

Low Temperature ◽

Inductively Coupled Plasma ◽

Inductively Coupled ◽

Ion Doping ◽

Mn Doped

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Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

Applied Sciences ◽

10.3390/app9173458 ◽

2019 ◽

Vol 9 (17) ◽

pp. 3458 ◽

Cited By ~ 2

Author(s):

Tan ◽

Zhou ◽

Hu ◽

Wang ◽

Yao

Keyword(s):

Composite Structure ◽

Inductively Coupled Plasma ◽

Total Internal Reflection ◽

Light Emitting Diodes ◽

Light Output ◽

Electrical Characteristics ◽

Light Emitting ◽

Inductively Coupled ◽

Icp Etching ◽

Output Characteristics

We demonstrate that the concave-convex circular composite structure sidewall prepared by inductively coupled plasma (ICP) etching is an effective approach to increase the light efficiency without deteriorating the electrical characteristics for micro light-emitting diodes (LEDs). The saturated light output power of the device using the concave-convex circular composite structure sidewalls with a radius of 2 μm is 39.75 mW, an improvement of 7.2% compared with that of the device using flat sidewalls. The enhanced light output characteristics are primarily attributed to the increased photon emitting due by decreasing the total internal reflection without losing the active region area.

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