Plasma and electrical characteristics depending on an antenna position in an inductively coupled plasma with a passive resonant antenna

2021 ◽  
Author(s):  
Ju Ho Kim ◽  
Chin-Wook Chung
Keyword(s):  
Inductively Coupled Plasma ◽  
Metal Plate ◽  
Electrical Characteristics ◽  
Coupling Loss ◽  
Rf Power ◽  
Ion Density ◽  
Electron Kinetics ◽  
Inductively Coupled ◽  
Cylindrical Reactor ◽  
Antenna Position

Abstract We investigated the plasma and electrical characteristics depending on the antenna position in an inductively coupled plasma with a passive resonant antenna. When the powered antenna and passive resonant antenna are installed near the top plate and in the middle of the cylindrical reactor (Setup A), respectively, the ion density at the resonance is about 2.4 times to 9 times higher than that at non-resonance. This is explained by the reduction in power loss in the powered antenna (including the matching circuits) and the increase in power absorbed by the plasma discharge. However, when the powered antenna and passive resonant antenna are interchanged (Setup B), the ion density at the resonance is not significantly different from that at the non-resonance. When RF power is changed from 50 W to 200 W, the ion density at the resonance of Setup B is 1.6 times to 5.4 times higher than at the non-resonance of Setup A. To analyse this difference, the profile of the z-axis ion density is measured and the electric and magnetic field simulations are investigated. The results are discussed along with the electron kinetics effect and the coupling loss between the antenna and the metal plate.

scholarly journals Sidewall Slope Control of InP Via Holes for 3D Integration

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Sio2 Layer ◽  
Etch Depth ◽  
Rf Power ◽  
3D Integration ◽  
Inductively Coupled ◽  
Wide Range ◽  
Via Holes ◽  
Dry Etch ◽  
Icp Etcher

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

2009 ◽  
Vol 615-617 ◽  
pp. 663-666
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sung Jae Joo ◽  
Sang Cheol Kim ◽  
Nam Kyun Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Annealing Process ◽  
Activation Process ◽  
Electrical Characteristics ◽  
Inductively Coupled ◽  
Edge Termination ◽  
Post Annealing ◽  
Surface Damages ◽  
Dry Etch

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

scholarly journals Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2562
Author(s):  
Pierre-Marie Coulon ◽  
Peng Feng ◽  
Tao Wang ◽  
Philip A. Shields
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Defect Density ◽  
Rf Power ◽  
Resonant Cavities ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Dc Bias ◽  
The Impact

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.

scholarly journals Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

2019 ◽  
Vol 9 (17) ◽  
pp. 3458 ◽  
Author(s):  
Tan ◽  
Zhou ◽  
Hu ◽  
Wang ◽  
Yao
Keyword(s):  
Composite Structure ◽  
Inductively Coupled Plasma ◽  
Total Internal Reflection ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Electrical Characteristics ◽  
Light Emitting ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Output Characteristics

We demonstrate that the concave-convex circular composite structure sidewall prepared by inductively coupled plasma (ICP) etching is an effective approach to increase the light efficiency without deteriorating the electrical characteristics for micro light-emitting diodes (LEDs). The saturated light output power of the device using the concave-convex circular composite structure sidewalls with a radius of 2 μm is 39.75 mW, an improvement of 7.2% compared with that of the device using flat sidewalls. The enhanced light output characteristics are primarily attributed to the increased photon emitting due by decreasing the total internal reflection without losing the active region area.

scholarly journals Computational Fluid Dynamics (CFD) Simulations and Experimental Measurements in an Inductively-Coupled Plasma Generator Operating at Atmospheric Pressure: Performance Analysis and Parametric Study

Processes ◽  
2019 ◽  
Vol 7 (3) ◽  
pp. 133 ◽  
Author(s):  
Sangeeta Punjabi ◽  
Dilip Barve ◽  
Narendra Joshi ◽  
Asoka Das ◽  
Dushyant Kothari ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atmospheric Pressure ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Rf Power ◽  
Gas Flow Rate ◽  
Inductively Coupled ◽  
Plasma Resistance ◽  
Computational Fluid Dynamics Cfd ◽  
Icp Torch

In this article, electrical characteristics of a high-power inductively-coupled plasma (ICP) torch operating at 3 MHz are determined by direct measurement of radio-frequency (RF) current and voltage together with energy balance in the system. The variation of impedance with two parameters, namely the input power and the sheath gas flow rate for a 50 kW ICP is studied. The ICP torch system is operated at near atmospheric pressure with argon as plasma gas. It is observed that the plasma resistance increases with an increase in the RF-power. Further, the torch inductance decreases with an increase in the RF-power. In addition, plasma resistance and torch inductance decrease with an increase in the sheath gas flow rate. The oscillator efficiency of the ICP system ranges from 40% to 80% with the variation of the Direct current (DC) powers. ICP has also been numerically simulated using Computational Fluid Dynamics (CFD) to predict the impedance profile. A good agreement was found between the CFD predictions and the impedance experimental data published in the literature.

scholarly journals Optical Diagnostics for a High.Power, RF-Inductively Coupled Plasma

1988 ◽  
Vol 117 ◽  
Author(s):  
N. S. Nogar ◽  
G. L. Keaton ◽  
J. E. Anderson ◽  
M. Trkula
Keyword(s):  
Flow Rate ◽  
Inductively Coupled Plasma ◽  
Emission Spectroscopy ◽  
Local Thermodynamic Equilibrium ◽  
Laser Induced Fluorescence ◽  
Rf Power ◽  
Inductively Coupled ◽  
Spatially Resolved ◽  
Hull Design ◽  
Ar Gas

AbstractEmission spectroscopy and laser-induced fluorescence have been used to monitor the field and tail-flame regions of a Hull-design 1 inductively coupled plasma. This plasma is used for a variety of syntheses 2,3 including SiC, TiC, BN, AlN and diamond. Temporallyand spatially-resolved spectra of both pure Ar and Ar/gas mixtures have been studied as a function of RF power, pressure and flow rate. Preliminary data suggest that the system is far from local thermodynamic equilibrium.

Depositon of Dielectric Films with Inductively Coupled Plasma-CVD in Dependence on Pressure and Two RF-Power-Sources

2009 ◽  
Vol 6 (S1) ◽  
pp. S582-S587 ◽  
Author(s):  
Sandro Jatta ◽  
Klaus Haberle ◽  
Andreas Klein ◽  
Robert Schafranek ◽  
Benjamin Koegel ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dielectric Films ◽  
Rf Power ◽  
Plasma Cvd ◽  
Power Sources ◽  
Inductively Coupled
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