scholarly journals Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

2019 ◽  
Vol 9 (17) ◽  
pp. 3458 ◽  
Author(s):  
Tan ◽  
Zhou ◽  
Hu ◽  
Wang ◽  
Yao
Keyword(s):  
Composite Structure ◽  
Inductively Coupled Plasma ◽  
Total Internal Reflection ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Electrical Characteristics ◽  
Light Emitting ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Output Characteristics

We demonstrate that the concave-convex circular composite structure sidewall prepared by inductively coupled plasma (ICP) etching is an effective approach to increase the light efficiency without deteriorating the electrical characteristics for micro light-emitting diodes (LEDs). The saturated light output power of the device using the concave-convex circular composite structure sidewalls with a radius of 2 μm is 39.75 mW, an improvement of 7.2% compared with that of the device using flat sidewalls. The enhanced light output characteristics are primarily attributed to the increased photon emitting due by decreasing the total internal reflection without losing the active region area.

scholarly journals Comparison of metal chloride-doped graphene electrode fabrication processes for GaN-based light emitting diodes

RSC Advances ◽  
2014 ◽  
Vol 4 (93) ◽  
pp. 51215-51219 ◽  
Author(s):  
Ki Chang Kwon ◽  
Buem Jun Kim ◽  
Cheolmin Kim ◽  
Jong-Lam Lee ◽  
Soo Young Kim
Keyword(s):  
Electrical Properties ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Light Emitting Diodes ◽  
Metal Chloride ◽  
Light Emitting ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Doped Graphene ◽  
Electrode Fabrication

The metal chloride doped graphene (D-G) enhanced the electrical properties of the light emitting diodes (LEDs). Therefore, avoiding the inductively coupled plasma etching step is better for D-G electrodes in GaN-based LEDs.

scholarly journals Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Sang Hyun Jung ◽  
Keun Man Song ◽  
Young Su Choi ◽  
Hyeong-Ho Park ◽  
Hyun-Beom Shin ◽  
...  
Keyword(s):  
Circular Hole ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inductively Coupled Plasma ◽  
Light Emitting Diodes ◽  
Hexagonal Lattice ◽  
Light Output ◽  
Light Extraction Efficiency ◽  
Output Intensity ◽  
Light Emitting

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square and hexagonal lattices are fabricated on the ITO layer by an electron beam lithography and inductively coupled plasma dry etching processes. The circular hole pattern with a hexagonal geometry is found to be the most effective among the studied structures. Light output intensity measurements reveal that the circular hole nanopatterned ITO LEDs with a hexagonal lattice show up to 35.6% enhancement of output intensity compared to the sample without nanopatterns.

scholarly journals Simulation of an Improved Design for n-Electrode with Holes for Thin-GaN Light-Emitting Diodes

2013 ◽  
Vol 2013 ◽  
pp. 1-6
Author(s):  
Farn-Shiun Hwu
Keyword(s):  
Light Emitting Diodes ◽  
Three Dimensional ◽  
Light Output ◽  
Electrical Characteristics ◽  
Light Emitting ◽  
Temperature Distributions ◽  
Gan Led ◽  
Wall Plug Efficiency ◽  
Improved Design ◽  
Novel Design

A novel design is proposed for n-electrode with holes to be applied in Thin-GaN light-emitting diodes (LEDs). The influence of the n-electrode with holes on the thermal and electrical characteristics of a Thin-GaN LED chip is investigated using a three-dimensional numerical simulation. The variations in current density and temperature distributions in the active layer of n-electrodes both with and without holes are very tiny. The percentages of light output from these holes are 29.8% and 38.5% for cases with 5 μm holes and 10 μm holes, respectively; the side length of the n-electrode (L) is 200 μm. Furthermore, the percentage increases with the size of the n-electrode. Thus, the light output can be increased 2.45 times using the n-electrode with holes design. The wall-plug efficiency (WPE) can also be improved from 2.3% to 5.7%. The most appropriate n-electrode and hole sizes are determined by WPE analysis.

Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes

2010 ◽  
Vol 49 (11) ◽  
pp. 116504 ◽  
Author(s):  
Ting-Wei Kuo ◽  
Shi-Xiong Lin ◽  
Pin-Kun Hung ◽  
Kwok-Keung Chong ◽  
Chen-I Hung ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Inductively Coupled Plasma ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Inductively Coupled ◽  
Barrier Region

Inductively Coupled Plasma Mesa Etched InGaN/GaN Light Emitting Diodes Using Cl2/BCl3/Ar Plasma

2006 ◽  
Vol 45 (9A) ◽  
pp. 6800-6802 ◽  
Author(s):  
Tzong-Bin Wang ◽  
Wei-Chou Hsu ◽  
Yen-Wei Che ◽  
Yeong-Jia Chen
Keyword(s):  
Inductively Coupled Plasma ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Inductively Coupled ◽  
Ar Plasma

scholarly journals Nano-imprinting of refractive-index-matched indium tin oxide sol–gel in light-emitting diodes for eliminating total internal reflection

RSC Advances ◽  
2018 ◽  
Vol 8 (65) ◽  
pp. 37021-37027 ◽  
Author(s):  
Sungjoo Kim ◽  
Chul Jong Yoo ◽  
Jae Yong Park ◽  
Sangwon Baek ◽  
Won Seok Cho ◽  
...  
Keyword(s):  
Refractive Index ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Total Internal Reflection ◽  
Light Emitting Diodes ◽  
Sol Gel ◽  
Light Output ◽  
Internal Reflection ◽  
Light Emitting ◽  
Output Efficiency

Refractive-index (RI)-matched nanostructures are implemented in GaN-based light-emitting diodes (LEDs) for enhancing light output efficiency.

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