Influence of Nucleation Parameters in Ge NCs Formation by LPCVD

2019 ◽  
Vol 4 (1) ◽  
pp. 339-343
Author(s):  
E S. Marins ◽  
S. N. Mestanza ◽  
R. C. Teixeira ◽  
I. Doi
Keyword(s):  
Nucleation Parameters

scholarly journals The exploration of the crystal nucleation parameters and physico-chemical analysis of a single crystal: 2-amino-4,6-dimethoxypyrimidinium hydrogen (2R,3R)-tartrate 2-amino-4,6-dimethoxypyrimidine

RSC Advances ◽  
2021 ◽  
Vol 11 (26) ◽  
pp. 15710-15721
Author(s):  
Paavai Era ◽  
RO. MU. Jauhar ◽  
V. Viswanathan ◽  
M. Madhangi ◽  
G. Vinitha ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Single Crystal ◽  
Chemical Properties ◽  
Crystal Nucleation ◽  
Nucleation Parameters ◽  
Physico Chemical

This paper discusses the structural orientations and the physico-chemical properties of a single crystal of 2-amino-4,6-dimethoxypyrimidinium hydrogen (2R,3R)-tartrate 2-amino-4,6-dimethoxypyrimidine (2ADT).

scholarly journals Impurities and Homogeneous Crystal Nucleation in Aqueous Solutions - An Overview

2019 ◽  
Vol 16 (3) ◽  
pp. 198-208
Author(s):  
C. K. Mahadevan
Keyword(s):  
Aqueous Solution ◽  
Aqueous Solutions ◽  
Research Group ◽  
Present Author ◽  
Crystal Nucleation ◽  
Nucleation Process ◽  
Nucleation Parameters ◽  
The Past ◽  
Homogeneous Crystal ◽  
Made In

Nucleation process is the most important stage in the formation of a crystal and has attracted the attention of researchers due to its importance in many technological and biological contexts. As the presence of impurities affects the nucleation process significantly, several studies have been made in the past to understand it. In this article is presented an overview of various studies made to understand the effect of soluble impurities on the crystal nucleation parameters of certain important materials in aqueous solution focusing the results reported by the research group of the present author.

Origin of the Nucleation Rate Empirical Data Inconsistencies for the Vapor-Gas Systems

2008 ◽  
Vol 3 (3) ◽  
pp. 46-52
Author(s):  
Anna A. Volf ◽  
Elena G. Fominykh ◽  
Mikhail P. Anisimov
Keyword(s):  
Nucleation Rate ◽  
Empirical Data ◽  
Dimensional Space ◽  
Three Dimensional ◽  
Diffusion Chamber ◽  
Ambient Atmosphere ◽  
Gas Treatment ◽  
Carrier Gas ◽  
Nucleation Parameters ◽  
Set Up

Independent results for vapor nucleation rates illustrate the nucleation rates inconsistencies for identical vapor-gas systems at the same conditions. Nature of these inconsistencies is not yet understood enough. Assumption is discussed that a reason for the experimental data inconsistencies is appeared in the result of the carrier gas effects on nucleation. It was supposed for a long time that any carrier gas is an ambient atmosphere to keep the nucleation temperature only. The recent experimental results have shown that a vapor-gas nucleation needs to be treated in approximation of binary solutions, i. e. a composition axis is appeared in addition to axes of nucleation rate versus pressure. Each single line of a nucleation rate isotherm is transformed to surface in a three dimensional space of nucleation parameters. Flow diffusion chamber and expansion Wilson type set up data comparison are discussed on the example of the published empirical data. It was shown using a model system that these two experimental realizations produce the inconsistent trajectories in the space of nucleation parameters. That misfit induces the different origin data inconsistencies and demonstrates relevance of gas treatment as an individual component of a nucleating vapor-gas system.

Grain Nucleation Parameters for Aluminum Alloys: Experimental Determination and Model Validation

2009 ◽  
Vol 40 (3) ◽  
pp. 646-653 ◽  
Author(s):  
M. Ahmadein ◽  
B. Pustal ◽  
R. Berger ◽  
E. Subašić ◽  
A. Bührig-Polaczek
Keyword(s):  
Aluminum Alloys ◽  
Experimental Determination ◽  
Model Validation ◽  
Nucleation Parameters

The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application

2001 ◽  
Vol 188 (2) ◽  
pp. 647-651 ◽  
Author(s):  
N. Nastase ◽  
H. Hardtdegen ◽  
R. Schmidt ◽  
H. Bay ◽  
H. L�th ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Nucleation Parameters ◽  
Gan Buffer Layer

Investigations on the nucleation parameters of InGaAs grown on InP during LPE

1994 ◽  
Vol 5 (5) ◽  
pp. 267-271
Author(s):  
R. Jothilingam ◽  
R. Dhanasekaran ◽  
P. Ramasamy
Keyword(s):  
Nucleation Parameters

scholarly journals Effect of Nucleation Parameters of Ge Quantum Dots Grown over Silicon Oxide by LPCVD

2007 ◽  
Vol 2 (2) ◽  
pp. 81-84
Author(s):  
S. N. M. Mestanza ◽  
I. Doi ◽  
N. C. Frateschi
Keyword(s):  
Quantum Dots ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Nucleation Parameters ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Mean Size ◽  
Germanium Quantum Dots

Germanium quantum dots (Ge-QD) were grown by Low Pressure Chemical Vapor Deposition (LPCVD) on Si nucleus previously grown on 3 nm thick SiO2 ultra thin film. Samples were analyzed by atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). We report the analysis of the influence of the nucleation parameters on size and spatial distribution of Ge-QD. AFM images show a Ge-QD density of around 3.6x1010 cm-2, with an 11 nm mean size and 2.9 nm height. Finally, HRTEM investigation shows that the Ge-QD have a crystalline structure, i.e., they are nanocrystals.

Estimation of Nucleation Parameters from Continuous Cooling Droplet Experiments

1967 ◽  
Vol 38 (11) ◽  
pp. 4182-4186 ◽  
Author(s):  
Fraser P. Price ◽  
Fred Gornick
Keyword(s):  
Continuous Cooling ◽  
Nucleation Parameters
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