Thermal Annealing Effects on the Atomic Layer Deposited LaAlO[sub 3] Thin Films on Si Substrate

2008 ◽  
Vol 11 (7) ◽  
pp. G33 ◽  
Author(s):  
Dail Eom ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim ◽  
Mann-Ho Cho ◽  
K. B. Chung
1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim

2000 ◽  
Author(s):  
Boateng Onwoma-Agyemann ◽  
Chao-Nan Xu ◽  
I. Usui ◽  
Xu-Guang Zheng ◽  
Morio Suzuki

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1320-1323 ◽  
Author(s):  
Min Young Cho ◽  
Hyun Young Choi ◽  
Min Su Kim ◽  
Jae-Young Leem ◽  
Dong-Yul Lee ◽  
...  

2013 ◽  
Vol 734-737 ◽  
pp. 2492-2495
Author(s):  
Yong June Choi ◽  
Kyung Mun Kang ◽  
Hyung Ho Park

The post-annealing effects on the surface morphological changes of undoped and Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer deposition (ALD) were investigated. The as-grown films were deposited by ALD at growth temperature of 200°C and also, post-annealing of the samples was accomplished at 300°C for 1 h under nitrogen atmosphere. The X-ray diffraction of the films was monitored to study the crystallinity of the films according to post-anneal. The field emission-scanning electron microscopy and atomic force microscopy were conducted to observe the surface morphological changes and measure the root-mean-square roughness of the films in order to analysis the post-annealing effects on the surface roughness of the films.


2000 ◽  
Vol 270 (1-3) ◽  
pp. 247-254 ◽  
Author(s):  
Dammika P Manage ◽  
John M Perz ◽  
Franco Gaspari ◽  
Emmanuel Sagnes ◽  
Stefan Zukotynski

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