Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 193-196 ◽  
Author(s):  
Yong Qiang Sun ◽  
Gan Feng ◽  
Jun Yong Kang ◽  
Wei Ning Qian ◽  
Li Ping Lv ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Process Parameters ◽  
Growth Process ◽  
High Quality ◽  
Substrate Quality ◽  
Large Growth

The large growth pits (LGPs) dependence of substrate quality, growth rate, and C/Si ratio have been discussed in the 4H-SiC epitaxial growth on 100 mm N-type 4H-SiC Si-face substrates misoriented by 4° toward [11-20] with a warm-wall planetary reactor. The formation and reduction of LGPs have been investigated by adjusting the growth process parameters. With the optimized process, the perfect surface morphology with lower LGPs density has been obtained on the high quality substrate.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

2019 ◽  
Vol 954 ◽  
pp. 31-34
Author(s):  
Guo Guo Yan ◽  
Xing Fang Liu ◽  
Feng Zhang ◽  
Zhan Wei Shen ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth ◽  
Influence Mechanism

Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.

The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs

2009 ◽  
Vol 156 (12) ◽  
pp. H979 ◽  
Author(s):  
Matty Caymax ◽  
Frederik Leys ◽  
Jéro^me Mitard ◽  
Koen Martens ◽  
Lijun Yang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Process Parameters ◽  
Growth Process ◽  
Device Performance

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

2013 ◽  
Vol 740-742 ◽  
pp. 205-208
Author(s):  
Galyna Melnychuk ◽  
Siva Prasad Kotamraju ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Growth Conditions ◽  
The Other ◽  
Additional Increase ◽  
Other Hand

In order to understand the influence of the Cl/Si ratio on the morphology of the low-temperature chloro-carbon epitaxial growth, HCl was added during the SiCl4/CH3Cl growth at 1300°C. Use of higher Cl/Si ratio allowed only modest improvements of the growth rate without morphology degradation, which did not go far beyond what has been achieved previously by optimizing the value of the input C/Si ratio. On the other hand, when the epitaxial growth process operated at too low or too high values of the input C/Si ratio, i.e., outside of the window of good epilayer morphology, any additional increase of the Cl/Si ratio caused improvement of the epilayer morphology. It was established that this improvement was due to a change of the effective C/Si ratio towards its intermediate values, which corresponded to more favorable growth conditions.

In-Situ Dry Etching of InP Using Phosphorus Tri-Chloride and Re-Growth Inside a Chemical Beam Epitaxial Growth Chamber

1993 ◽  
Vol 300 ◽  
Author(s):  
K M. Kapre ◽  
W. T. Tsang ◽  
P. F. Sciortino
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Substrate Surface ◽  
Etching Rate ◽  
Growth Chamber ◽  
Dramatic Improvement ◽  
First Time ◽  
Substrate Temperatures

ABSTRACTWe have extended the capability and versatility of a chemical beam epitaxial (CBE) system by demonstrating reactive chemical beam etching (RCBE) of InP using phosphorus tri chloride (PCl3)as the gaseous etching beam injected directly into the growth chamber. This permits instant switching from etching to growth (and vice versa) in the same run for the first time in CBE. We investigated RCBE of InP at various substrate temperatures between 400 °C and 580°C, under different PCl3 fluences, and etching conditions. Excellent surface morphology was obtained at high temperatures (> 530°C - 570°C) and under an etching rate of < 6 Å/sec. We also found that upon addition of trimethylindium flow equivalent to a growth rate of 1 Å/sec during RCBE a dramatic improvement in surface morphology was obtained even at a high net etching rate of 10 Å/sec. The surface morphology obtained under such conditions is indistinguishable from that of the original substrate surface. Using Si02 as a mask, in-situ etching of laser mesas followed immediately by regrowth of blocking layers with excellent wetting characteristics was obtained.

Iodine vapor phase growth of GaN: dependence of epitaxial growth rate on process parameters

2002 ◽  
Vol 235 (1-4) ◽  
pp. 140-148 ◽  
Author(s):  
V Tassev ◽  
D Bliss ◽  
M Suscavage ◽  
Q.S Paduano ◽  
S-Q Wang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Process Parameters ◽  
Iodine Vapor ◽  
Phase Growth ◽  
Vapor Phase Growth

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

2005 ◽  
Vol 483-485 ◽  
pp. 73-76 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Olof Kordina ◽  
Z. Shishkin ◽  
Shailaja P. Rao ◽  
R. Everly ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Hydrogen Chloride ◽  
Growth Rates ◽  
Growth Process ◽  
Cluster Formation ◽  
Film Morphology ◽  
Hydrogen Carrier ◽  
Low Crystalline

Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these experiments. It is proposed that the addition of HCl suppresses Si cluster formation in the gas phase, and possibly also preferentially etches material of low crystalline quality. The exact mechanism of the growth using an HCl additive is still under investigation, however, higher growth rates could be obtained and the surfaces were improved when HCl was added to the flow. The film morphology was studied using SEM and AFM and the quality with LTPL analysis, which are reported.

Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE

2001 ◽  
Vol 693 ◽  
Author(s):  
X.Q. Xiu ◽  
R. Zhang ◽  
D.Q. Lu ◽  
L. Gu ◽  
B. Shen ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Smooth Surface ◽  
Growth Front ◽  
Hydride Vapor Phase Epitaxy ◽  
Nucleation Density ◽  
High Quality ◽  
Lower Growth ◽  
Initial Stage ◽  
Lower Growth Rate

AbstractThe effect of introduction of additional HCl on the surface morphology and structural properties of hydride vapor phase epitaxy grown GaN during growth is investigated, and high quality GaN with smooth surface on sapphire is obtained by adding the additional HCl into the HVPE reactor. The result is attributed to the control of polarity of GaN films during growth. The additional HCl altered the equilibrium at the GaN growth front, and the reversible reaction decreased the nucleation density or growth rate. Further, lower growth rate promote the surface diffusion and the coalescence over (0001) plane. Additional HCl may improve the surface morphology by suppressing the (000-1) polarity growth in the initial stage of the growth.

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD

2017 ◽  
Vol 897 ◽  
pp. 43-46 ◽  
Author(s):  
Kazukuni Hara ◽  
Hiroaki Fujibayashi ◽  
Yuuichi Takeuchi ◽  
Shoichiro Omae
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Epitaxial Growth ◽  
High Speed ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
High Speed Rotation ◽  
Speed Rotation ◽  
Growth Technology

In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compare to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm).

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