Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

ABSTRACTA new method for the nucleation of oxygen precipitates in Czochralski silicon is described. The temperature is ramped at approximately 100°C/hr from a very low value, near 400°C, to the highest temperature used for subsequent process steps. The technique generates a larger precipitate number density and a greater volume fraction of precipitated oxygen than standard isothermal nucleation anneals. The morphology of the precipitates changes from 0.lum sizéd (100) platelets to small particles unresovable by TEM. The new temperature ramping technique can reduce the time needed for precipitate nucleation by at least a factor of three. The details of oxygen precipitation can be totally controlled by adjusting the temperature ramp rate as a function of time.

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Effect of ramping anneals under inert or oxidizing ambient on the formation of oxygen precipitate denuded zone in nitrogen-doped Czochralski silicon wafers

physica status solidi (a) ◽

10.1002/pssa.200522115 ◽

2006 ◽

Vol 203 (8) ◽

pp. 1934-1939

Author(s):

Xiangyang Ma ◽

Daxi Tian ◽

Longfei Gong ◽

Deren Yang

Keyword(s):

Silicon Wafers ◽

Nitrogen Doped ◽

Czochralski Silicon ◽

Oxygen Precipitate

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Homogeneous and Heterogeneous Nucleation of Oxygen in Si-CZ

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.178-179.495 ◽

2011 ◽

Vol 178-179 ◽

pp. 495-500

Author(s):

Josef Kubena ◽

Alan Kubena ◽

Ondřej Caha ◽

Mojmir Meduna

Keyword(s):

Homogeneous Nucleation ◽

Annealing Temperature ◽

Nucleation Theory ◽

Classical Nucleation Theory ◽

Nucleation Kinetics ◽

Czochralski Silicon ◽

Oxygen Precipitate ◽

Different Populations ◽

The Impact ◽

Kinetics Of

We present numerical simulations of nucleation kinetics of vacancies and interstitials during RTA and we study the impact of annealing temperature on bulk micro defect concentration. Since the concentration of vacancies and oxygen and also its diffusion kinetics are significantly different inside Czochralski silicon, we assume the nucleation of vacancies and oxygen independent on each other. We show that different populations of voids formed during RTA can influence formation of oxygen precipitate nuclei. According to classical nucleation theory the homogeneous nucleation dominates around temperatures 500 °C while the calculation of oxygen diffusion into the voids shows that the oxygen clusters over the critical size can be formed above temperatures 700 °C. The nuclei concentration of BMD is thus the superposition of homogeneous nucleation below 700 °C and heterogeneous one prevailing above 700 °C.

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Oxygen precipitate denuded zone formation in Czochralski silicon wafer based on rapid thermal processing in nitrogen ambient

Semiconductor Science and Technology ◽

10.1088/0268-1242/22/12/011 ◽

2007 ◽

Vol 22 (12) ◽

pp. 1302-1306 ◽

Cited By ~ 4

Author(s):

Liming Fu ◽

Deren Yang ◽

Xiangyang Ma ◽

Hanqin Jiang ◽

Duanlin Que

Keyword(s):

Silicon Wafer ◽

Thermal Processing ◽

Rapid Thermal Processing ◽

Zone Formation ◽

Czochralski Silicon ◽

Oxygen Precipitate

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The Effect of Annealing Temperature on the Morphology of Stacking Faults in Czochralski Silicon

MRS Proceedings ◽

10.1557/proc-2-381 ◽

1980 ◽

Vol 2 ◽

Author(s):

R. F. Pinizzotto ◽

H. F. Schaake

Keyword(s):

Annealing Temperature ◽

Stacking Faults ◽

Nucleation And Growth ◽

X Ray ◽

Czochralski Silicon ◽

Oxygen Precipitation ◽

Oxygen Precipitate

ABSTRACTNucleation and growth of stacking faults formed in CZ silicon during oxygen precipitation have been studied using x-ray topography, TEM and FTIR. Samples were annealed in argon for various times at 550°C and 750°C followed by a 16 hour anneal in dry oxygen at 1000°C. In samples annealed at 550°C, the stacking faults were several layers thick with colonies of precipitates at their centers. The faults in samples annealed at 750°C contained only one particle and were single in nature. It is proposed that the faults are formed by thin oxygen precipitate platelets and that the different morphologies are due to different oxygen precipitation rates. The platelets are probably a modified cristobalite, as determined by micro-diffraction results.

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