scholarly journals Studies on Group IV and V Valve Metal Corrosion in Acidic Fluoride Media

2020 ◽  
Vol 167 (8) ◽  
pp. 081505
Author(s):  
Tirumala Mandula Rao ◽  
Ranjith Punathil Meethal ◽  
M S Amrutha ◽  
Ramanathan Srinivasan
Keyword(s):  
Group Iv ◽  
Metal Corrosion ◽  
Valve Metal

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

ISOMER-SHIFT SYSTEMATICS OF 57Co IMPLANTED IN GROUP IV SEMICONDUCTORS

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-893-C6-896 ◽  
Author(s):  
G. WEYER ◽  
G. GREBE ◽  
A. KETTSCHAU ◽  
B. I. DEUTCH ◽  
A. NYLANDSTED LARSEN ◽  
...  
Keyword(s):  
Isomer Shift ◽  
Group Iv ◽  
Group Iv Semiconductors

Anti-diabetic activity of diphenhydramine in diabetic rats

2020 ◽  
Vol 11 (4) ◽  
pp. 5067-5070
Author(s):  
Pang Jyh Chayng ◽  
Nurul Ain ◽  
Kaswandi Md Ambia ◽  
Rahim Md Noah
Keyword(s):  
Blood Glucose ◽  
Blood Glucose Level ◽  
Glucose Level ◽  
Fasting Blood Glucose ◽  
Insulin Level ◽  
Diabetic Rats ◽  
Group Iv ◽  
Diabetic Rat ◽  
Control Group ◽  
Group I

The purpose of this project is to study the anti-diabetic effect of on a diabetic rat model. A total of Twenty male Sprague rats were used and it randomly distributed into four groups which are Group I: , Group II: negative control, Group III: and Group IV: and . In diabetic model were induced with via injection at the dosage of 65mg/kg. and FBG (Fasting Blood Glucose) level of diabetic rats were assessed every three days. Blood was collected via cardiac puncture at day 21 after the induction of treatment. Insulin level of the rats was assessed with the Mercodia Rat Insulin ELISA kit. FBG level of group I (12.16 ±3.96, p<0.05) and group IV (11.34 ±3.67, p<0.05) were significantly decreased. Meanwhile, the for all rats did not show any significant increase. However, the insulin level was escalated in group IV (0.74+0.25, p<0.05) significantly. The present study shows that the and the combination of and lowered blood glucose level and enhanced insulin secretion.

Surface Chemistry Effects on Quantum Confinement in Group IV Nanocrystals

2019 ◽  
Author(s):  
Nathan Neale ◽  
Michael Carroll ◽  
Rens Limpens ◽  
Lance Wheeler ◽  
Gregory Pach
Keyword(s):  
Surface Chemistry ◽  
Quantum Confinement ◽  
Group Iv

Failure Types & Analysis In Cu Process Development of Design-Rule 0.18μm CPU

2001 ◽  
Author(s):  
DongKwon Jeong ◽  
JuHyeon Ahn ◽  
SangIn Lee ◽  
JooHyuk Chung ◽  
ByungLyul Park ◽  
...  
Keyword(s):  
Process Improvement ◽  
Process Development ◽  
Metal Corrosion ◽  
Pass Rate ◽  
Design Rule ◽  
The Novel ◽  
Corrosion Loss ◽  
Barrier Metal ◽  
Development State ◽  
Failure Types

Abstract This paper presents the problems, the solutions, and the development state of the novel 0.18 μm Cu Metal Process through failure analysis of the Alpha CPU under development at Samsung Electronics. The presented problems include : “Via Bottom Lifting” induced by the Cu Via void, “Via Bottom dissociation” due to the IMD stress, “Via side dissociation” due to the poor formation of the Barrier Metal, “Via short/not-open failure” due to the IMD lifting, and Cu metal Corrosion/Loss. The analysis was carried out on the Via Contact Test Chain Patterns, using the “Electron (ION) Charge Up” method. After carefully analyzing each of the failure types, process improvement efforts followed. As a result, the pass rate of the via contact Rc was brought up from a mere 20% to 95%, and the device speed higher than 1.1 GHz was achieved, which surpasses the target speed of 1 GHz.

Unique Autoclave Stress Induced Failure Mechanism

2005 ◽  
Author(s):  
John Butchko ◽  
Bruce T. Gillette
Keyword(s):  
Corrosion Rate ◽  
Grain Boundary ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Metal Corrosion ◽  
Corrosion Mechanism ◽  
Reliability Testing ◽  
Process Change ◽  
Transistor Reliability ◽  
Pass Through

Abstract Autoclave Stress failures were encountered at the 96 hour read during transistor reliability testing. A unique metal corrosion mechanism was found during the failure analysis, which was creating a contamination path to the drain source junction, resulting in high Idss and Igss leakage. The Al(Si) top metal was oxidizing along the grain boundaries at a faster rate than at the surface. There was subsurface blistering of the Al(Si), along with the grain boundary corrosion. This blistering was creating a contamination path from the package to the Si surface. Several variations in the metal stack were evaluated to better understand the cause of the failures and to provide a process solution. The prevention of intergranular metal corrosion and subsurface blistering during autoclave testing required a materials change from Al(Si) to Al(Si)(Cu). This change resulted in a reduced corrosion rate and consequently prevented Si contamination due to blistering. The process change resulted in a successful pass through the autoclave testing.

Analysis of Al-over-Cu Bond Pad Hillock and Pit Hole Defects

2005 ◽  
Author(s):  
Daniel Cavasin ◽  
Abdullah Yassine
Keyword(s):  
Focused Ion Beam ◽  
Galvanic Corrosion ◽  
Process Analysis ◽  
Ion Beam ◽  
Metal Corrosion ◽  
Process Characterization ◽  
Nucleation Sites ◽  
Hole Defects ◽  
Bond Pads ◽  
Sawing Process

Abstract Bond pad metal corrosion was observed during assembly process characterization of a 0.13um Cu microprocessor device. The bond pad consisted of 12kÅ of Al-0.5%Cu atop 9kÅ of Cu, separated by a thin Ta diffusion barrier. The corrosion was first noted after the wafer dicing process. Analysis of the pad surface revealed pitting-type corrosion, consistent with published reports of classic galvanic cell reactions between Al2Cu (theta phase) particles and the surrounding Al pad metal. Analysis of the bond pads on samelot wafers which had not been diced showed higher-thanexpected incidence of hillock and pit hole defects on the Al surface. Statistically designed experiments were formulated to investigate the possibility that the observed pre-saw pad metal defects act as nucleation sites for galvanic corrosion during the sawing process. Analyses of the experimental samples were conducted using optical and scanning electron microscopy, along with focused ion beam deprocessing and energy dispersive X-ray. This paper explores the relationship between the presence of these pre-existing defects and the propensity for the bond pads to corrode during the dicing process, and reviews the conditions under which pit hole defects are formed during the final stages of the Cu-metallized wafer fabrication process. Indications are that strict control of wafer fab backend processes can reduce or eliminate the incidence of such defects, resulting in elimination of bond pad corrosion in the wafer dicing process.

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