Cleaning Process Applicable to Silicon Carbide Chemical Vapor Deposition Reactor

2013 ◽  
Vol 3 (1) ◽  
pp. N3006-N3009 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yusuke Fukumoto ◽  
Kosuke Mizuno ◽  
Yuuki Ishida ◽  
Toshiyuki Ohno
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cleaning Process ◽  
Chemical Vapor Deposition Reactor

Susceptor Coating Materials Applicable for SiC Reactor Cleaning

2017 ◽  
Vol 897 ◽  
pp. 99-102 ◽  
Author(s):  
Kohei Shioda ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shinichi Mitani ◽  
Yoshinao Takahashi
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Cleaning Process ◽  
Coating Materials ◽  
Chemical Vapor Deposition Reactor ◽  
Pyrolitic Carbon

In order to develop a cleaning process for the silicon carbide chemical vapor deposition reactor, the susceptor coating materials are developed for protecting the susceptor from the etching by chlorine trifluoride gas. The chlorine trifluoride gas does not give a serious damage to the pyrolitic carbon film at the temperatures lower than 480 °C, at which temperature the quick and practical reactor cleaning process is expected to be possible

Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor

2017 ◽  
Vol 6 (8) ◽  
pp. P526-P530 ◽  
Author(s):  
Kohei Shioda ◽  
Keisuke Kurashima ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shin-ichi Mitani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cleaning Process ◽  
Chemical Vapor Deposition Reactor

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor
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