CFD Simulation of Chemical Vapor Deposition of Silicon Carbide in CH3SiCl3-H2 System

2014 ◽  
Vol 10 (1) ◽  
pp. 135-137 ◽  
Author(s):  
Kyoon Choi ◽  
Jun-Woo Kim
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cfd Simulation ◽  
Chemical Vapor

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

1999 ◽  
Vol 61-62 ◽  
pp. 176-178 ◽  
Author(s):  
A.N Vorob’ev ◽  
A.E Komissarov ◽  
A.S Segal ◽  
Yu.N Makarov ◽  
S.Yu Karpov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Modeling Analysis ◽  
Phase Nucleation

Consolidation of SiC Powder Coated with SiO2 Nanolayer by Spark Plasma Sintering

2014 ◽  
Vol 616 ◽  
pp. 32-36 ◽  
Author(s):  
Zhen Hua He ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Relative Density ◽  
Spark Plasma Sintering ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Sintering ◽  
Spark Plasma

Silica (SiO2) nanolayer was coated on silicon carbide (SiC) powder by rotary chemical vapor deposition (RCVD). The SiC/SiO2 composite were consolidated by spark plasma sintering (SPS) at 1923 K using the SiO2 coated SiC powder. The relative density and hardness of the SiC/SiO2 composites increased with increasing SiO2 content, and were 97% and 17 GPa, respectively, at SiO2 content of 22 mass%. The relative density and hardness of a composite consolidated using the mixture powders of SiC and SiO2 (22 mass%) at 1923 K were 81% and 8 GPa, respectively.

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