scholarly journals Design of a Silicon Carbide Chemical Vapor Deposition Reactor Cleaning Process Using Chlorine Trifluoride Gas Accounting for Exothermic Reaction Heat

2020 ◽  
Vol 9 (10) ◽  
pp. 104008
Author(s):  
Masaya Hayashi ◽  
Takumi Mamyouda ◽  
Hitoshi Habuka ◽  
Akio Ishiguro ◽  
Shigeaki Ishii ◽  
...  
2013 ◽  
Vol 3 (1) ◽  
pp. N3006-N3009 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yusuke Fukumoto ◽  
Kosuke Mizuno ◽  
Yuuki Ishida ◽  
Toshiyuki Ohno

2017 ◽  
Vol 897 ◽  
pp. 99-102 ◽  
Author(s):  
Kohei Shioda ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shinichi Mitani ◽  
Yoshinao Takahashi

In order to develop a cleaning process for the silicon carbide chemical vapor deposition reactor, the susceptor coating materials are developed for protecting the susceptor from the etching by chlorine trifluoride gas. The chlorine trifluoride gas does not give a serious damage to the pyrolitic carbon film at the temperatures lower than 480 °C, at which temperature the quick and practical reactor cleaning process is expected to be possible


2017 ◽  
Vol 6 (8) ◽  
pp. P526-P530 ◽  
Author(s):  
Kohei Shioda ◽  
Keisuke Kurashima ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shin-ichi Mitani ◽  
...  

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  

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