Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Nonvolatile transparent manganese oxide thin film resistance random access memory devices

2014 ◽  
Vol 53 (8S3) ◽  
pp. 08NL03 ◽  
Author(s):  
Kai-Huang Chen ◽  
Jen-Wei Huang ◽  
Chien-Min Cheng ◽  
Jian-Yang Lin ◽  
Tzung-Shiun Wu
Keyword(s):  
Thin Film ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Oxide Thin Film ◽  
Memory Devices ◽  
Film Resistance ◽  
Access Memory ◽  
Resistance Random Access Memory

Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

2007 ◽  
Vol 997 ◽  
Author(s):  
Hisashi Shima ◽  
Fumiyoshi Takano ◽  
Hiro Akinaga ◽  
Isao H Inoue ◽  
Hidenori Takagi
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Pt Electrode ◽  
Resistance Random Access Memory ◽  
Nio Thin Film ◽  
Non Volatile Memory

AbstractThe resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.

scholarly journals Overview of radiation effects on emerging non-volatile memory technologies

2017 ◽  
Vol 32 (4) ◽  
pp. 381-392
Author(s):  
Irfan Fetahovic ◽  
Edin Dolicanin ◽  
Djordje Lazarevic ◽  
Boris Loncar
Keyword(s):  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
High Radiation ◽  
Different Types ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Change Memory

In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.

Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Diffusion ◽  
Access Memory ◽  
Promising Candidate ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Oxygen Vacancy Diffusion

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.

Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

2015 ◽  
Vol 32 (2) ◽  
pp. 028502 ◽  
Author(s):  
Hong-Tao Liu ◽  
Bao-He Yang ◽  
Hang-Bing Lv ◽  
Xiao-Xin Xu ◽  
Qing Luo ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory

scholarly journals Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

2013 ◽  
Vol 34 (5) ◽  
pp. 677-679 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Hopping Conduction ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Doped Silicon
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