Etch Characteristics of Copper Thin Films in Inductively Coupled Plasma of Piperidine/Ethanol/Ar Gas Mixture

2021 ◽  
Vol 10 (5) ◽  
pp. 054006
Author(s):  
Eun Taek Lim ◽  
Ji Soo Lee ◽  
Sung Yong Park ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Gas Mixture ◽  
Inductively Coupled ◽  
Ar Gas

Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture

Vacuum ◽  
2015 ◽  
Vol 119 ◽  
pp. 151-158 ◽  
Author(s):  
Adrian Adalberto Garay ◽  
Su Min Hwang ◽  
Ji Hyun Choi ◽  
Byoung Chul Min ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Magnetic Thin Films ◽  
Gas Mixture ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Ar Gas

Zirconia Coatings Deposited by Inductively Coupled Plasma Assisted CVD

1998 ◽  
Vol 555 ◽  
Author(s):  
P. Colpo ◽  
G. Ceccone ◽  
B. Leclercq ◽  
P. Salvatore ◽  
F. Rossi
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Gas Mixture ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Inductively Coupled ◽  
Deposition Parameters ◽  
Coating Characteristics ◽  
Dc Bias

AbstractThin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD (ICP-PACVD) reactor from tetra (tert-butoxy)-zircon precursor diluted in Ar and O2 gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed.

Inductively Coupled Plasma Reactive Ion Etching of GeSbTe Thin Films in a HBr/Ar Gas

2007 ◽  
Vol 90 (1) ◽  
pp. 95-106 ◽  
Author(s):  
JANG WOO LEE ◽  
HAN NA CHO ◽  
SU RYUN MIN ◽  
CHEE WON CHUNG
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Ar Gas

Rapid synthesis of nc-Si/a-SiNx:H QD thin films by plasma processing for their cost effective applications in photonic and photovoltaic devices

RSC Advances ◽  
2015 ◽  
Vol 5 (78) ◽  
pp. 63572-63579 ◽  
Author(s):  
Debajyoti Das ◽  
Basudeb Sain
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Plasma Processing ◽  
Cost Effective ◽  
Single Step ◽  
High Density ◽  
Gas Mixture ◽  
Photovoltaic Devices ◽  
Rapid Synthesis ◽  
Inductively Coupled

A rapid and single step synthesis of nc-Si/a-SiNx:H QD thin films has been made possible from a (SiH4 + NH3) gas mixture, with the advent of high density low pressure planar inductively coupled plasma processing.

Investigation of ETCH Profiles in Etching of PZT and Pt Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Chee Won Chung ◽  
Inyong Song ◽  
Jong Sig Lee
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Secondary Ion Mass Spectrometry ◽  
X Ray ◽  
Inductively Coupled ◽  
Gas Chemistry ◽  
Pzt Films ◽  
Ar Gas ◽  
Etch Profile

ABSTRACTReactive ion etching of PbZrxTi1−xO3 (PZT) and Pt thin films was studied by using chlorine and fluorine gas chemistry in an Inductively Coupled Plasma (ICP). PZT films were etched by varying the etching parameters including coil RF power, dc-bias voltage to substrate, and gas pressure. Etching characteristics of PZT films were investigated in terms of etch rate, etch selectivity, etch profile. Etch profile along with etch anisotropy was observed as a function of etching parameter by field emission scanning electron microscopy (FESEM). For the understanding of etching mechanism, X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma (ICP) analysis for the film composition were utilized. Platinum thin films have been etched by using Cl2/Ar in an ICP for the development offence-free etching. The redeposited materials formed on the pattern sidewall by using Cl2/Ar gas combination were analyzed by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). We found that the redeposited material was mainly PtCh compound. Based on this result, SiCl4/Cl2/Ar gas chemistry has been proposed as a new etching gas and demonstrated good etching profile of Pt films without unwanted redeposition.

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